{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,6,7]],"date-time":"2025-06-07T20:27:25Z","timestamp":1749328045432},"reference-count":10,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016,6]]},"DOI":"10.1109\/mixdes.2016.7529698","type":"proceedings-article","created":{"date-parts":[[2016,8,4]],"date-time":"2016-08-04T20:27:52Z","timestamp":1470342472000},"page":"47-51","source":"Crossref","is-referenced-by-count":4,"title":["Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs"],"prefix":"10.1109","author":[{"given":"Michael","family":"Graef","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Franziska","family":"Hain","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fabian","family":"Hosenfeld","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fabian","family":"Horst","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Atieh","family":"Farokhnejad","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Alexander","family":"Kloes","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Benjamin","family":"Iniguez","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2014.2326622"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2020321"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1063\/1.332950"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ULIS.2015.7063751"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ULIS.2014.6813926"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/SISPAD.2003.1233645"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2010.2070470"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2714(01)00138-X"},{"key":"ref9","doi-asserted-by":"crossref","first-page":"290","DOI":"10.1109\/IEDM.1985.190954","article-title":"simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon","author":"del alamo","year":"1985","journal-title":"1985 International Electron Devices Meeting"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ULIS.2016.7440053"}],"event":{"name":"2016 MIXDES - 23rd International Conference \"Mixed Design of Integrated Circuits and Systems\"","start":{"date-parts":[[2016,6,23]]},"location":"Lodz, Poland","end":{"date-parts":[[2016,6,25]]}},"container-title":["2016 MIXDES - 23rd International Conference Mixed Design of Integrated Circuits and Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7523589\/7529685\/07529698.pdf?arnumber=7529698","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,24]],"date-time":"2017-06-24T19:59:01Z","timestamp":1498334341000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7529698\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,6]]},"references-count":10,"URL":"https:\/\/doi.org\/10.1109\/mixdes.2016.7529698","relation":{},"subject":[],"published":{"date-parts":[[2016,6]]}}}