{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,27]],"date-time":"2025-09-27T21:47:14Z","timestamp":1759009634172},"reference-count":16,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016,6]]},"DOI":"10.1109\/mixdes.2016.7529699","type":"proceedings-article","created":{"date-parts":[[2016,8,4]],"date-time":"2016-08-04T20:27:52Z","timestamp":1470342472000},"page":"52-57","source":"Crossref","is-referenced-by-count":1,"title":["Modeling approach for rapid NEGF-based simulation of ballistic current in ultra-short DG MOSFETs"],"prefix":"10.1109","author":[{"given":"Fabian","family":"Hosenfeld","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Michael","family":"Graef","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Fabian","family":"Horst","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Alexander","family":"Kloes","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Benjamin","family":"Iniguez","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Francois","family":"Lime","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/MIEL.2012.6222841"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2005.850945"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1006\/spmi.2000.0920"},{"article-title":"MATLAB codes from: Nanoscale device modeling: the Green's function method","year":"2013","author":"datta","key":"ref13"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1007\/3-540-28841-4"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1017\/CBO9781139164313"},{"journal-title":"Electronic Transport in Mesoscopic Systems","year":"1997","author":"datta","key":"ref16"},{"article-title":"NanoMOS","year":"2016","author":"ren","key":"ref4"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/SISPAD.2002.1034569"},{"key":"ref6","first-page":"701","author":"baumgartner","year":"2013","journal-title":"VSP-a quantum-electronic simulation framework"},{"article-title":"NanoTCAD ViDES","year":"2014","author":"fiori","key":"ref5"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/MIXDES.2014.6872151"},{"article-title":"NanoFET","year":"2016","author":"anantram","key":"ref7"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2008.06.035"},{"key":"ref1","first-page":"707","article-title":"Does Source-to-Drain Tunneling Limit the Ultimate Scaling of MOSFETs?","author":"wang","year":"2002","journal-title":"Electron Devices Meeting 2002 IEDM '02 International"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2271093"}],"event":{"name":"2016 MIXDES - 23rd International Conference \"Mixed Design of Integrated Circuits and Systems\"","start":{"date-parts":[[2016,6,23]]},"location":"Lodz, Poland","end":{"date-parts":[[2016,6,25]]}},"container-title":["2016 MIXDES - 23rd International Conference Mixed Design of Integrated Circuits and Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7523589\/7529685\/07529699.pdf?arnumber=7529699","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2016,9,29]],"date-time":"2016-09-29T17:12:57Z","timestamp":1475169177000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7529699\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,6]]},"references-count":16,"URL":"https:\/\/doi.org\/10.1109\/mixdes.2016.7529699","relation":{},"subject":[],"published":{"date-parts":[[2016,6]]}}}