{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,23]],"date-time":"2024-10-23T05:13:19Z","timestamp":1729660399459,"version":"3.28.0"},"reference-count":13,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016,6]]},"DOI":"10.1109\/mixdes.2016.7529736","type":"proceedings-article","created":{"date-parts":[[2016,8,4]],"date-time":"2016-08-04T16:27:52Z","timestamp":1470328072000},"page":"223-228","source":"Crossref","is-referenced-by-count":1,"title":["MOS transistor as a current-controlled device"],"prefix":"10.1109","author":[{"given":"Wieslaw","family":"Kuzmicz","sequence":"first","affiliation":[]}],"member":"263","reference":[{"journal-title":"Low noise multichannel integrated circuits in CMOS technology for physics and biology applications","year":"2002","author":"grybos","key":"ref10"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1049\/el.2015.1933"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/ICSICT.2008.4734564"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2075932"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2003.821546"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/ICCD.2006.4380819"},{"key":"ref6","doi-asserted-by":"crossref","first-page":"1027","DOI":"10.1109\/TED.2003.812504","article-title":"MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations","volume":"50","author":"yeo","year":"2003","journal-title":"IEEE Trans Electron Devices"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/16.974710"},{"key":"ref8","first-page":"735","article-title":"Direct tunneling current model for circuit simulation","author":"choi","year":"1999","journal-title":"Tech Digest International Electron Devices Meeting"},{"key":"ref7","doi-asserted-by":"crossref","first-page":"1232","DOI":"10.1109\/TED.2002.1013281","article-title":"Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs","volume":"49","author":"lee","year":"2002","journal-title":"IEEE Trans Electron Devices"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2003.816145"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2003.821553"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2000.904442"}],"event":{"name":"2016 MIXDES - 23rd International Conference \"Mixed Design of Integrated Circuits and Systems\"","start":{"date-parts":[[2016,6,23]]},"location":"Lodz, Poland","end":{"date-parts":[[2016,6,25]]}},"container-title":["2016 MIXDES - 23rd International Conference Mixed Design of Integrated Circuits and Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7523589\/7529685\/07529736.pdf?arnumber=7529736","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,24]],"date-time":"2017-06-24T15:59:00Z","timestamp":1498319940000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7529736\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,6]]},"references-count":13,"URL":"https:\/\/doi.org\/10.1109\/mixdes.2016.7529736","relation":{},"subject":[],"published":{"date-parts":[[2016,6]]}}}