{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,23]],"date-time":"2025-09-23T14:07:15Z","timestamp":1758636435695,"version":"3.28.0"},"reference-count":22,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,5]]},"DOI":"10.1109\/mocast.2018.8376607","type":"proceedings-article","created":{"date-parts":[[2018,6,11]],"date-time":"2018-06-11T23:29:45Z","timestamp":1528759785000},"page":"1-4","source":"Crossref","is-referenced-by-count":3,"title":["Experimental measurements on resistive switching devices: Gaining hands-on experience"],"prefix":"10.1109","author":[{"given":"Jorge","family":"Gomez","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Angel","family":"Abusleme","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ioannis","family":"Vourkas","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Georgios Ch.","family":"Sirakoulis","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2012.2190369"},{"journal-title":"Neuromemristive artificial intelligence","year":"0","key":"ref11"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1002\/cta.1957"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2015.7169004"},{"key":"ref14","article-title":"Thermodynamic-RAM technology stack","author":"nugent","year":"2017","journal-title":"International Journal of Parallel Emergent and Distributed Systems"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2015.04.057"},{"journal-title":"High performance array control instruments","year":"0","key":"ref16"},{"key":"ref17","article-title":"Interfacial versus filamentary resistive switching in TiO2 and HfO2 devices","volume":"b34","author":"sassine","year":"2016","journal-title":"J Vac Sci Technol"},{"journal-title":"Tektronix","article-title":"Low Level Measurements Handbook","year":"2016","key":"ref18"},{"key":"ref19","doi-asserted-by":"crossref","DOI":"10.1186\/1556-276X-9-552","article-title":"Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices","volume":"9","author":"salaoru","year":"2014","journal-title":"Nanoscale Research Letters"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(68)90092-0"},{"key":"ref3","doi-asserted-by":"crossref","first-page":"80","DOI":"10.1038\/nature06932","article-title":"The missing memristor found","volume":"453","author":"strukov","year":"2008","journal-title":"Nature"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201303520"},{"journal-title":"International Technology Roadmap for Semiconductors (ITRS)","year":"0","key":"ref5"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TNNLS.2013.2261545"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2015.7169234"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/29\/10\/104001"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TCT.1971.1083337"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/MCAS.2016.2583673"},{"key":"ref20","article-title":"Operational amplifier gain stability, Part 1: General system analysis","author":"oljaca","year":"2010","journal-title":"Tech Rep"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2017.04.040"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1186\/s11671-015-1118-6"}],"event":{"name":"2018 7th International Conference on Modern Circuits and Systems Technologies (MOCAST)","start":{"date-parts":[[2018,5,7]]},"location":"Thessaloniki, Greece","end":{"date-parts":[[2018,5,9]]}},"container-title":["2018 7th International Conference on Modern Circuits and Systems Technologies (MOCAST)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8370368\/8376555\/08376607.pdf?arnumber=8376607","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,27]],"date-time":"2022-01-27T23:02:44Z","timestamp":1643324564000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8376607\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,5]]},"references-count":22,"URL":"https:\/\/doi.org\/10.1109\/mocast.2018.8376607","relation":{},"subject":[],"published":{"date-parts":[[2018,5]]}}}