{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,19]],"date-time":"2026-03-19T01:43:47Z","timestamp":1773884627188,"version":"3.50.1"},"reference-count":13,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,8]]},"DOI":"10.1109\/mwscas.2015.7282090","type":"proceedings-article","created":{"date-parts":[[2015,10,1]],"date-time":"2015-10-01T18:05:25Z","timestamp":1443722725000},"page":"1-4","source":"Crossref","is-referenced-by-count":2,"title":["Switching characteristics of MgO based self-compliant ReRAM devices"],"prefix":"10.1109","author":[{"given":"Wenchao","family":"Lu","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Wenbo","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Prem","family":"Thapaliya","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ryan","family":"O' Dell","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Rashmi","family":"Jha","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"crossref","first-page":"134301","DOI":"10.1063\/1.4821900","article-title":"Conduction mechanism of resistance switching in fully transparent MgO-based memory devices","volume":"114","author":"ting","year":"2013","journal-title":"Journal of Applied Physics"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1063\/1.4866671"},{"key":"ref12","doi-asserted-by":"crossref","first-page":"202","DOI":"10.1109\/LED.2013.2294375","article-title":"Novel Defects-Trapping RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current","volume":"35","author":"chen","year":"2014","journal-title":"Electron Device Letters"},{"key":"ref13","doi-asserted-by":"crossref","first-page":"651","DOI":"10.1021\/nl304246d","article-title":"Monitoring oxygen movement by raman spectroscopy of resistive random access memory with a graphene-inserted electrode","volume":"13","author":"he","year":"2013","journal-title":"Nano Letters"},{"key":"ref4","doi-asserted-by":"crossref","first-page":"113503","DOI":"10.1063\/1.4749809","article-title":"Switching dynamics and charge transport studies of resistive random access memory devices","volume":"101","author":"branden","year":"2012","journal-title":"Applied Physics Letters"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2012.2190369"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/MWSCAS.2014.6908583"},{"key":"ref5","doi-asserted-by":"crossref","first-page":"199","DOI":"10.1109\/LED.2013.2293591","article-title":"Ultrathin Metal\/ Amorphous-Silicon\/Metal Diode for Bipolar RRAM Selector Applications","volume":"35","author":"leqi","year":"2014","journal-title":"Electron Device Letters"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2101044"},{"key":"ref7","doi-asserted-by":"crossref","first-page":"1203","DOI":"10.1109\/TED.2012.2182770","article-title":"Highly Uniform, Self-Compliance, and Forming-Free ALD-Based RRAM With Ge Doping","volume":"59","author":"zhongrui","year":"2012","journal-title":"Electron Devices IEEE Transactions"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"2237","DOI":"10.1109\/JPROC.2010.2070830","article-title":"Resistive random access memory (ReRAM) based on metal oxides","volume":"98","author":"hiroyuki","year":"2010","journal-title":"Proceedings of the IEEE"},{"key":"ref1","doi-asserted-by":"crossref","first-page":"28","DOI":"10.1016\/S1369-7021(08)70119-6","article-title":"Resistive switching in transition metal oxides","volume":"11","author":"akihito","year":"2008","journal-title":"Materials Today"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1063\/1.3429024"}],"event":{"name":"2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS)","location":"Fort Collins, CO, USA","start":{"date-parts":[[2015,8,2]]},"end":{"date-parts":[[2015,8,5]]}},"container-title":["2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7269503\/7281994\/07282090.pdf?arnumber=7282090","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,23]],"date-time":"2017-06-23T16:37:31Z","timestamp":1498235851000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7282090\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,8]]},"references-count":13,"URL":"https:\/\/doi.org\/10.1109\/mwscas.2015.7282090","relation":{},"subject":[],"published":{"date-parts":[[2015,8]]}}}