{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,4]],"date-time":"2024-09-04T19:17:12Z","timestamp":1725477432823},"reference-count":13,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016,10]]},"DOI":"10.1109\/mwscas.2016.7870124","type":"proceedings-article","created":{"date-parts":[[2017,3,7]],"date-time":"2017-03-07T19:33:58Z","timestamp":1488915238000},"page":"1-4","source":"Crossref","is-referenced-by-count":0,"title":["Automated characterization of reverse recovery parameters in high speed LDMOS devices"],"prefix":"10.1109","author":[{"given":"Carlos","family":"Bernal","sequence":"first","affiliation":[]},{"given":"Manuel","family":"Jimenez","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","first-page":"1072","article-title":"Automated wafer-level measurement of ldmos reverse recovery parameters","author":"latorre","year":"0"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.18687\/LACCEI2016.1.1.346"},{"journal-title":"High Speed PCB Layout Techniques","year":"2005","key":"ref12"},{"journal-title":"Stat-Ease?s Design Expert V10","year":"0","key":"ref13"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/EPE.2007.4417713"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/16.168728"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/APEC.1994.316361"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/SMICND.2001.967508"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/63.712311"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ECCE.2011.6064295"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/16.491243"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1976.1050822"},{"journal-title":"JESD 24-10","article-title":"JEDEC SOLID STATE TECHNOLOGY ASSOCIATION Test method for measurement of reverse recovery time trr for power mosfet drain-source diodes","year":"2002","key":"ref9"}],"event":{"name":"2016 IEEE 59th International Midwest Symposium on Circuits and Systems (MWSCAS)","start":{"date-parts":[[2016,10,16]]},"location":"Abu Dhabi, United Arab Emirates","end":{"date-parts":[[2016,10,19]]}},"container-title":["2016 IEEE 59th International Midwest Symposium on Circuits and Systems (MWSCAS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7862453\/7869936\/07870124.pdf?arnumber=7870124","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,18]],"date-time":"2017-03-18T10:34:39Z","timestamp":1489833279000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7870124\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,10]]},"references-count":13,"URL":"https:\/\/doi.org\/10.1109\/mwscas.2016.7870124","relation":{},"subject":[],"published":{"date-parts":[[2016,10]]}}}