{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,4]],"date-time":"2024-09-04T17:46:50Z","timestamp":1725472010193},"reference-count":24,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016,10]]},"DOI":"10.1109\/mwscas.2016.7870135","type":"proceedings-article","created":{"date-parts":[[2017,3,7]],"date-time":"2017-03-07T14:33:58Z","timestamp":1488897238000},"page":"1-4","source":"Crossref","is-referenced-by-count":2,"title":["Surface passivation method for optimum performance of 4H-SiC devices"],"prefix":"10.1109","author":[{"given":"Amna","family":"Siddiqui","sequence":"first","affiliation":[]},{"given":"Hazem","family":"Elgabra","sequence":"additional","affiliation":[]},{"given":"Shakti","family":"Singh","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/ICECS.2013.6815511"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2016.2587160"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1557\/jmr.2012.269"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1063\/1.3077016"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.98.026101"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2007.907418"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1088\/1674-4926\/35\/6\/066001"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2372036"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.527-529.987"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1063\/1.3144272"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1002\/9781118313534.ch6"},{"key":"ref3","first-page":"167","author":"plummer","year":"2000","journal-title":"Silicon VLSI Technology"},{"journal-title":"Nitrogen and hydrogen induced trap passivation at the SiO2\/4H-SiC interface","year":"2005","author":"dhar","key":"ref6"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1002\/pssb.200844011"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2107576"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/55.910617"},{"journal-title":"Progress Toward High Temperature High Power SiC Devices","year":"1994","author":"neudeck","key":"ref2"},{"journal-title":"Properties of Advanced Semiconductor Materials GaN AIN SiC BN SiC SiGe","year":"2001","author":"goldberg","key":"ref1"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.778-780.1009"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1063\/1.3689766"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.4028\/www.scientific.net\/MSF.645-648.693"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2101575"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2011.2142291"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1063\/1.3131845"}],"event":{"name":"2016 IEEE 59th International Midwest Symposium on Circuits and Systems (MWSCAS)","start":{"date-parts":[[2016,10,16]]},"location":"Abu Dhabi, United Arab Emirates","end":{"date-parts":[[2016,10,19]]}},"container-title":["2016 IEEE 59th International Midwest Symposium on Circuits and Systems (MWSCAS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7862453\/7869936\/07870135.pdf?arnumber=7870135","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,18]],"date-time":"2017-03-18T06:41:48Z","timestamp":1489819308000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7870135\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,10]]},"references-count":24,"URL":"https:\/\/doi.org\/10.1109\/mwscas.2016.7870135","relation":{},"subject":[],"published":{"date-parts":[[2016,10]]}}}