{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,7,27]],"date-time":"2025-07-27T07:27:14Z","timestamp":1753601234476,"version":"3.28.0"},"reference-count":24,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,4]]},"DOI":"10.1109\/nems.2015.7147509","type":"proceedings-article","created":{"date-parts":[[2015,7,7]],"date-time":"2015-07-07T21:44:38Z","timestamp":1436305478000},"page":"630-634","source":"Crossref","is-referenced-by-count":3,"title":["High on\/off current ratio in SB-CNTFET based on tuning the gate insulator parameters for different ambient temperatures"],"prefix":"10.1109","author":[{"given":"Amin Ghasemi Nejad","family":"Raeini","sequence":"first","affiliation":[]},{"given":"Zoheir","family":"Kordrostami","sequence":"additional","affiliation":[]},{"given":"Mojtaba","family":"Javaheri","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"crossref","first-page":"1319","DOI":"10.1021\/nl049222b","article-title":"Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays","volume":"4","author":"javeyguo","year":"2004","journal-title":"Nano Lett"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1021\/nl034700o"},{"key":"ref12","first-page":"370","article-title":"Carbon nanotube field effect transistors-Fabrication","author":"wong","year":"2003","journal-title":"device physics and circuit implications in Proc IEEE ISSCC"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2013.06.013"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(95)00164-6"},{"key":"ref15","article-title":"A Compact Gate Tunnel Current Model for Nano Scale MOSFET with Sub1nm Gate Oxide","volume":"1","author":"kumar","year":"2010","journal-title":"International Journal of Applied Engineering Research"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1063\/1.1503165"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/19\/34\/345204"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.890384"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRev.38.80"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IndiaCom.2014.6828174"},{"key":"ref3","doi-asserted-by":"crossref","first-page":"447","DOI":"10.1007\/s00339-012-7543-9","article-title":"High on\/off current ratio in ballistic CNTFETs based on tuning the gate insulator parameters for different ambient temperatures","author":"shirazi","year":"2013","journal-title":"Appl Phys A"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2010.220"},{"key":"ref5","article-title":"Investigating The Effect Of Chirality On Coaxial Carbon Nanotube Field Effect Transistor","author":"gowrisankar","year":"2012","journal-title":"International Conference on Computing Electronics and Electrical Technologies [ICCEET] IEEE"},{"key":"ref8","article-title":"Quantum Simulation of carbon nanotube field-effect transistor","author":"ahn","year":"2007","journal-title":"school of engineering Information and Communications University Daejeon Korea"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.3938\/jkps.50.1887"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/CARE.2013.6733774"},{"key":"ref1","first-page":"30","article-title":"Performance characteristics of a Single Walled Carbon Nanotube Field Effect Transistor (SWCNT-FET)","author":"kajariagrawal","year":"2014","journal-title":"IEEE"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2005.851427"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2003.818338"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.815366"},{"article-title":"DISPERSION IMPACT ON BALLISTIC CNTFET N+-i-n+ Performances, Tima Editions\/ENS, 2006","year":"0","author":"desgreys","key":"ref21"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2007.907799"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/ICECS.2006.379967"}],"event":{"name":"2015 IEEE 10th International Conference on Nano\/Micro Engineered and Molecular Systems (NEMS)","start":{"date-parts":[[2015,4,7]]},"location":"Xi'an, China","end":{"date-parts":[[2015,4,11]]}},"container-title":["10th IEEE International Conference on Nano\/Micro Engineered and Molecular Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7132046\/7147342\/07147509.pdf?arnumber=7147509","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,23]],"date-time":"2017-06-23T15:17:18Z","timestamp":1498231038000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7147509\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,4]]},"references-count":24,"URL":"https:\/\/doi.org\/10.1109\/nems.2015.7147509","relation":{},"subject":[],"published":{"date-parts":[[2015,4]]}}}