{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,3]],"date-time":"2026-08-03T07:03:12Z","timestamp":1785740592101,"version":"3.56.0"},"reference-count":20,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,4]]},"DOI":"10.1109\/nems.2017.8017136","type":"proceedings-article","created":{"date-parts":[[2017,8,29]],"date-time":"2017-08-29T15:38:24Z","timestamp":1504021104000},"page":"788-791","source":"Crossref","is-referenced-by-count":3,"title":["Fabrication of liquid-gated molybdenum disulfide field-effect transistor"],"prefix":"10.1109","author":[{"given":"Jingjie","family":"Sha","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wei","family":"Xu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Zhishan","family":"Yuan","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bing","family":"Xu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yunfei","family":"Chen","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.105.136805"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2010.279"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2007.891795"},{"key":"ref13","doi-asserted-by":"crossref","first-page":"1229","DOI":"10.1126\/science.1150878","article-title":"Chemically derived, ultrasmooth graphene nanoribbon semiconductors","volume":"319","author":"li","year":"2008","journal-title":"Science"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1021\/nn303513c"},{"key":"ref15","article-title":"Insulated gate field effect transistor and its manufacturing method","author":"yamazaki","year":"1990","journal-title":"Insulated gate field effect transistor and its manufacturing method"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1002\/j.1538-7305.1968.tb00038.x"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.871842"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.876261"},{"key":"ref19","author":"wolf","year":"1971","journal-title":"Semiconductors"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1021\/ja805090z"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1002\/anie.200903463"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1021\/ja108127r"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1021\/nl901596m"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1021\/nn406102h"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201000724"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1021\/nl073407b"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1021\/nl0727361"},{"key":"ref9","doi-asserted-by":"crossref","first-page":"463","DOI":"10.1021\/j100393a010","article-title":"Detailed photocurrent spectroscopy of the semiconducting group VI transition metal dichalcogenides","volume":"86","author":"parklnclon\u2019","year":"1982","journal-title":"J Phys Chem"},{"key":"ref20","author":"philips","year":"1962","journal-title":"Transistor Engineering"}],"event":{"name":"2017 IEEE 12th International Conference on Nano\/Micro Engineered and Molecular Systems (NEMS)","location":"Los Angeles, CA, USA","start":{"date-parts":[[2017,4,9]]},"end":{"date-parts":[[2017,4,12]]}},"container-title":["2017 IEEE 12th International Conference on Nano\/Micro Engineered and Molecular Systems (NEMS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8012169\/8016956\/08017136.pdf?arnumber=8017136","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,10,2]],"date-time":"2019-10-02T18:23:23Z","timestamp":1570040603000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/8017136\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,4]]},"references-count":20,"URL":"https:\/\/doi.org\/10.1109\/nems.2017.8017136","relation":{},"subject":[],"published":{"date-parts":[[2017,4]]}}}