{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T10:45:57Z","timestamp":1730285157621,"version":"3.28.0"},"reference-count":11,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,6]]},"DOI":"10.1109\/newcas.2018.8585606","type":"proceedings-article","created":{"date-parts":[[2019,1,18]],"date-time":"2019-01-18T16:00:57Z","timestamp":1547827257000},"page":"35-39","source":"Crossref","is-referenced-by-count":4,"title":["Modeling Surface Recombination with Enhanced Devices Network for Optoelectronics"],"prefix":"10.1109","author":[{"given":"Chiara","family":"Rossi","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Pietro","family":"Buccella","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Camillo","family":"Stefanucci","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jean-Michel","family":"Sallese","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2014.11.016"},{"key":"ref3","doi-asserted-by":"crossref","first-page":"263","DOI":"10.1109\/TED.2009.2035025","article-title":"Global Modeling Strategy of Parasitic Coupled Currents Induced by Minority-Carrier Propagation in Semiconductor Substrates","volume":"57","author":"lo","year":"2010","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref10","first-page":"71","article-title":"Determination of the surface recombination velocity of unpassivated silicon from spectral photoconductance measurements","author":"mackel","year":"2003","journal-title":"3rd World Conference on Photovoltaic Energy Conversion"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1002\/(SICI)1099-159X(199907\/08)7:4<327::AID-PIP250>3.3.CO;2-2"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1063\/1.1884258"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2015.2513008"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2397394"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1063\/1.328186"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2017.8066583"},{"journal-title":"Physics of Semiconductor Devices","year":"1981","author":"sze","key":"ref9"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2817286"}],"event":{"name":"2018 16th IEEE International New Circuits and Systems Conference (NEWCAS)","start":{"date-parts":[[2018,6,24]]},"location":"Montreal, QC","end":{"date-parts":[[2018,6,27]]}},"container-title":["2018 16th IEEE International New Circuits and Systems Conference (NEWCAS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8572699\/8585422\/08585606.pdf?arnumber=8585606","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,8,23]],"date-time":"2020-08-23T19:02:06Z","timestamp":1598209326000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8585606\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,6]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/newcas.2018.8585606","relation":{},"subject":[],"published":{"date-parts":[[2018,6]]}}}