{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,5]],"date-time":"2024-09-05T03:55:58Z","timestamp":1725508558091},"reference-count":16,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017,8]]},"DOI":"10.1109\/nvmsa.2017.8064473","type":"proceedings-article","created":{"date-parts":[[2017,10,24]],"date-time":"2017-10-24T20:43:01Z","timestamp":1508877781000},"page":"1-4","source":"Crossref","is-referenced-by-count":2,"title":["Advanced performance improvement algorithms for emerging resistive memory: CBRAM case study"],"prefix":"10.1109","author":[{"given":"Tinish","family":"Bhattacharya","sequence":"first","affiliation":[]},{"given":"Supriya","family":"Chakraborty","sequence":"additional","affiliation":[]},{"given":"Manan","family":"Suri","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1145\/1669112.1669157"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TC.2016.2525982"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2015.7056043"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2017.7939082"},{"journal-title":"Adesto Technologies Datasheet 256 Kbit 1 65 V Minimum Non-volatile Serial EEPROM SPI Bus","year":"0","key":"ref14"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TC.2016.2525982"},{"journal-title":"JEDEC Solid state Technology Association","article-title":"Jedec standard: Electrically erasable programmable rom (eeprom) program\/erase endurance and data retention stress test","year":"0","key":"ref16"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1145\/1669112.1669118"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2014.07.135"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/DSN.2015.49"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ICCD.2015.7357179"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1145\/2591971.2591994"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ICCD.2012.6378623"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1038\/nmat3070"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2008.4796620"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1145\/2818950.2818962"}],"event":{"name":"2017 IEEE 6th Non-Volatile Memory Systems and Applications Symposium (NVMSA)","start":{"date-parts":[[2017,8,16]]},"location":"Hsinchu, Taiwan","end":{"date-parts":[[2017,8,18]]}},"container-title":["2017 IEEE 6th Non-Volatile Memory Systems and Applications Symposium (NVMSA)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8045884\/8064454\/08064473.pdf?arnumber=8064473","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,10,28]],"date-time":"2017-10-28T03:28:15Z","timestamp":1509161295000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/8064473\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,8]]},"references-count":16,"URL":"https:\/\/doi.org\/10.1109\/nvmsa.2017.8064473","relation":{},"subject":[],"published":{"date-parts":[[2017,8]]}}}