{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,6]],"date-time":"2026-04-06T06:04:41Z","timestamp":1775455481759,"version":"3.50.1"},"reference-count":21,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,10]]},"DOI":"10.1109\/nvmts.2015.7457427","type":"proceedings-article","created":{"date-parts":[[2016,4,25]],"date-time":"2016-04-25T21:45:12Z","timestamp":1461620712000},"page":"1-5","source":"Crossref","is-referenced-by-count":2,"title":["The resistive switching characteristics in tantalum oxide-based RRAM device via combining high-temperature sputtering with plasma oxidation"],"prefix":"10.1109","author":[{"given":"Xiaorong","family":"Chen","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jie","family":"Feng","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Haili","family":"Ma","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","first-page":"1","article-title":"Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust Hf02 based RRAM","author":"lee","year":"2008","journal-title":"Int Electron Device Meet"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2014.10.133"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.82.155321"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2008.4796676"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2101044"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1021\/jp311951e"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2012.05.028"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1007\/s00339-015-9170-8"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1149\/1.1850362"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1007\/BF02648373"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2195709"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1088\/0034-4885\/75\/7\/076502"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2261795"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1186\/1556-276X-9-125"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/EDSSC.2013.6628225"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2010.11.031"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1038\/nmat3070"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.200900375"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1063\/1.4863744"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1063\/1.4892471"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1063\/1.4896154"}],"event":{"name":"2015 15th Non-Volatile Memory Technology Symposium (NVMTS)","location":"Beijing, China","start":{"date-parts":[[2015,10,12]]},"end":{"date-parts":[[2015,10,14]]}},"container-title":["2015 15th Non-Volatile Memory Technology Symposium (NVMTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7451913\/7457421\/07457427.pdf?arnumber=7457427","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,17]],"date-time":"2017-03-17T16:43:43Z","timestamp":1489769023000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7457427\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,10]]},"references-count":21,"URL":"https:\/\/doi.org\/10.1109\/nvmts.2015.7457427","relation":{},"subject":[],"published":{"date-parts":[[2015,10]]}}}