{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,7]],"date-time":"2024-09-07T00:14:52Z","timestamp":1725668092613},"reference-count":8,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,10]]},"DOI":"10.1109\/nvmts.2018.8603105","type":"proceedings-article","created":{"date-parts":[[2019,1,23]],"date-time":"2019-01-23T21:16:50Z","timestamp":1548278210000},"page":"1-4","source":"Crossref","is-referenced-by-count":2,"title":["Improvement of Endurance and Data-retention in 40nm TaO<inf>X<\/inf>-based ReRAM by Finalize Verify"],"prefix":"10.1109","author":[{"given":"Shouhei","family":"Fukuyama","sequence":"first","affiliation":[]},{"given":"Shinpei","family":"Matsuda","sequence":"additional","affiliation":[]},{"given":"Ryutaro","family":"Yasuhara","sequence":"additional","affiliation":[]},{"given":"Ken","family":"Takeuchi","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2012.6177078"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2008.4796676"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2248157"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2017.7936321"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/IRPS.2018.8353677"},{"key":"ref7","first-page":"62t","article-title":"Comprehensive understanding of conductive filament characteristics and retention properties for highly reliable ReRAM","author":"muraoka","year":"2013","journal-title":"2013 Symposium on VLSI Technology VLSIT"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.7567\/SSDM.2008.J-9-3"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IMW.2017.7939101"}],"event":{"name":"2018 Non-Volatile Memory Technology Symposium (NVMTS)","start":{"date-parts":[[2018,10,22]]},"location":"Sendai","end":{"date-parts":[[2018,10,24]]}},"container-title":["2018 Non-Volatile Memory Technology Symposium (NVMTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8589963\/8603098\/08603105.pdf?arnumber=8603105","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,8,23]],"date-time":"2020-08-23T23:33:33Z","timestamp":1598225613000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8603105\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,10]]},"references-count":8,"URL":"https:\/\/doi.org\/10.1109\/nvmts.2018.8603105","relation":{},"subject":[],"published":{"date-parts":[[2018,10]]}}}