{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,6]],"date-time":"2024-09-06T07:50:55Z","timestamp":1725609055369},"reference-count":6,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2018,10]]},"DOI":"10.1109\/nvmts.2018.8603110","type":"proceedings-article","created":{"date-parts":[[2019,1,24]],"date-time":"2019-01-24T02:16:50Z","timestamp":1548296210000},"page":"1-3","source":"Crossref","is-referenced-by-count":1,"title":["Margin Dependence on Array Size for Asymmetric Resistive Memory Cell"],"prefix":"10.1109","author":[{"given":"Zhizhen","family":"Yu","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yichen","family":"Fang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zongwei","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yimao","family":"Cai","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ru","family":"Huang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jintong","family":"Xu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201202170"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1021\/nl404160u"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2225147"},{"key":"ref5","first-page":"166t","article-title":"Self-rectifying bipolar TaO x\/TiO 2 RRAM with superior endurance over 10 12 cycles for 3D high-density storage-class memory","author":"hsu","year":"2013","journal-title":"VLSI Technology (VLSIT) 2013 Symposium on"},{"key":"ref2","first-page":"94","article-title":"Endurance and scaling trends of novel access-devices for multi-layer crosspoint-memory based on mixed-ionic-electronic-conduction (MIEC) materials","author":"shenoy","year":"2011","journal-title":"VLSI Technology (VLSIT) 2011 Symposium on"},{"key":"ref1","first-page":"168t","article-title":"Multi-layer tunnel barrier (Ta 2 O 5\/TaO x\/TiO 2) engineering for bipolar RRAM selector applications","author":"woo","year":"2013","journal-title":"VLSI Technology (VLSIT) 2013 Symposium on"}],"event":{"name":"2018 Non-Volatile Memory Technology Symposium (NVMTS)","start":{"date-parts":[[2018,10,22]]},"location":"Sendai","end":{"date-parts":[[2018,10,24]]}},"container-title":["2018 Non-Volatile Memory Technology Symposium (NVMTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8589963\/8603098\/08603110.pdf?arnumber=8603110","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,8,24]],"date-time":"2020-08-24T03:33:37Z","timestamp":1598240017000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8603110\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,10]]},"references-count":6,"URL":"https:\/\/doi.org\/10.1109\/nvmts.2018.8603110","relation":{},"subject":[],"published":{"date-parts":[[2018,10]]}}}