{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,15]],"date-time":"2025-11-15T17:13:13Z","timestamp":1763226793610,"version":"3.44.0"},"reference-count":11,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,10,1]],"date-time":"2019-10-01T00:00:00Z","timestamp":1569888000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,10,1]],"date-time":"2019-10-01T00:00:00Z","timestamp":1569888000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,10]]},"DOI":"10.1109\/nvmts47818.2019.8986219","type":"proceedings-article","created":{"date-parts":[[2020,2,10]],"date-time":"2020-02-10T22:36:59Z","timestamp":1581374219000},"page":"1-5","source":"Crossref","is-referenced-by-count":15,"title":["Scalability Study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method"],"prefix":"10.1109","author":[{"given":"Fei","family":"Mo","sequence":"first","affiliation":[{"name":"The University of Tokyo, 4-6-1 Komaba Meguro-Ku,Institute of Industrial Science,Tokyo,Japan,153-8505"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yusaku","family":"Tagawa","sequence":"additional","affiliation":[{"name":"The University of Tokyo, 7-3-1 Hongo, Bunkyo-Ku,Department of Electrical Engineering and Information Systems,Tokyo,Japan,113-8654"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Takuya","family":"Saraya","sequence":"additional","affiliation":[{"name":"The University of Tokyo, 4-6-1 Komaba Meguro-Ku,Institute of Industrial Science,Tokyo,Japan,153-8505"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Toshiro","family":"Hiramoto","sequence":"additional","affiliation":[{"name":"The University of Tokyo, 4-6-1 Komaba Meguro-Ku,Institute of Industrial Science,Tokyo,Japan,153-8505"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Masaharu","family":"Kobayashi","sequence":"additional","affiliation":[{"name":"The University of Tokyo, Yayoi 2-11-16, Bunkyo-ku,VLSI Design &#x0026; Education Center,Tokyo,Japan,113-8656"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref4","first-page":"1","article-title":"First demonstration and performance improvement of ferroelectric HfO2-based resistive switch with low operation current and intrinsic diode property","author":"fujii","year":"2016","journal-title":"VLSI Technology 2016 IEEE Symposium"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268374"},{"journal-title":"Quantum Transport Atom to Transistor","year":"2006","author":"datta","key":"ref10"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614702"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838400"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2885932"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1063\/1.5016823"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1017\/CBO9781139195065"},{"key":"ref2","first-page":"617","article-title":"Ferroelectric-field-effect-enhanced electroresistance in metal\/ferroelectric\/semiconductor tunnel junctions","volume":"12 7","author":"zheng","year":"0","journal-title":"Nature Materials"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevApplied.7.024005"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms5289"}],"event":{"name":"2019 19th Non-Volatile Memory Technology Symposium (NVMTS)","start":{"date-parts":[[2019,10,28]]},"location":"Durham, NC, USA","end":{"date-parts":[[2019,10,30]]}},"container-title":["2019 19th Non-Volatile Memory Technology Symposium (NVMTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8979203\/8986154\/08986219.pdf?arnumber=8986219","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,9,5]],"date-time":"2025-09-05T18:17:33Z","timestamp":1757096253000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8986219\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,10]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/nvmts47818.2019.8986219","relation":{},"subject":[],"published":{"date-parts":[[2019,10]]}}}