{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T11:03:21Z","timestamp":1730286201752,"version":"3.28.0"},"reference-count":28,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,12,7]],"date-time":"2022-12-07T00:00:00Z","timestamp":1670371200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,12,7]],"date-time":"2022-12-07T00:00:00Z","timestamp":1670371200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,12,7]]},"DOI":"10.1109\/nvmts57339.2022.10229781","type":"proceedings-article","created":{"date-parts":[[2023,8,30]],"date-time":"2023-08-30T13:20:30Z","timestamp":1693401630000},"page":"1-5","source":"Crossref","is-referenced-by-count":0,"title":["Finite Element Analysis of GeTe \/ Ge2Sb2Te5 Interfacial Phase Change Memory Devices"],"prefix":"10.1109","author":[{"given":"Md Tashfiq Bin","family":"Kashem","sequence":"first","affiliation":[{"name":"University of Connecticut,Department of Electrical and Computer Engineering,Storrs,CT,USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jake","family":"Scoggin","sequence":"additional","affiliation":[{"name":"University of Connecticut,Department of Electrical and Computer Engineering,Storrs,CT,USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Helena","family":"Silva","sequence":"additional","affiliation":[{"name":"University of Connecticut,Department of Electrical and Computer Engineering,Storrs,CT,USA"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ali","family":"Gokirmak","sequence":"additional","affiliation":[{"name":"University of Connecticut,Department of Electrical and Computer Engineering,Storrs,CT,USA"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.201409013"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1063\/1.4817068"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1063\/1.5025331"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2745500"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1063\/1.5093907"},{"key":"ref10","first-page":"1","volume":"13","author":"boniardi","year":"2019","journal-title":"Phys Status Solidi - Rapid Res Lett"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2011.96"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1063\/1.2181191"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.202200419"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1063\/1.5067397"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1149\/10801.0003ecst"},{"journal-title":"COMSOL Multiphysics Reference Manual Version 5 1","year":"0","key":"ref18"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1063\/1.4891239"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1021\/jz402268v"},{"key":"ref26","volume":"12","author":"aryana","year":"2021","journal-title":"Nat Commun"},{"key":"ref25","first-page":"29.1.1","author":"boniardi","year":"0","journal-title":"2014 IEEE International Electron Devices Meeting"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2745506"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1021\/jacs.7b05143"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.93.045209"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1126\/science.aay0291"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2008.2003012"},{"key":"ref8","first-page":"130t","author":"takaura","year":"0","journal-title":"2013 Symposium on VLS Technology"},{"key":"ref7","first-page":"29.2.1","author":"takaura","year":"0","journal-title":"2014 IEEE International Electron Devices Meeting"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.202000412"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1126\/science.abj1261"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.201800539"},{"key":"ref6","first-page":"310","article-title":"First Demonstration of Ge\n\n2\n\nSb\n\n2\n\nTe\n\n5\n\n-Based Superlattice Phase Change Memory with Low Reset Current Density (~3 MA\/cm\n\n2\n\n) and Low Resistance Drift (~0.002 at 105°C)","author":"intisar khan","year":"0","journal-title":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.2c01869"}],"event":{"name":"2022 20th Non-Volatile Memory Technology Symposium (NVMTS)","start":{"date-parts":[[2022,12,7]]},"location":"Stanford, CA, USA","end":{"date-parts":[[2022,12,9]]}},"container-title":["2022 20th Non-Volatile Memory Technology Symposium (NVMTS)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10227858\/10229532\/10229781.pdf?arnumber=10229781","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,9,18]],"date-time":"2023-09-18T13:41:32Z","timestamp":1695044492000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10229781\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,12,7]]},"references-count":28,"URL":"https:\/\/doi.org\/10.1109\/nvmts57339.2022.10229781","relation":{},"subject":[],"published":{"date-parts":[[2022,12,7]]}}}