{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,6]],"date-time":"2024-09-06T00:39:38Z","timestamp":1725583178324},"reference-count":8,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2013,1]]},"DOI":"10.1109\/rws.2013.6486706","type":"proceedings-article","created":{"date-parts":[[2013,4,5]],"date-time":"2013-04-05T16:47:29Z","timestamp":1365180449000},"page":"256-258","source":"Crossref","is-referenced-by-count":5,"title":["A W-band stacked FET power amplifier with 17 dBm P<inf>sat<\/inf> in 45-nm SOI MOS"],"prefix":"10.1109","author":[{"given":"Jefy","family":"Jayamon","sequence":"first","affiliation":[]},{"given":"Amir","family":"Agah","sequence":"additional","affiliation":[]},{"given":"Bassel","family":"Hanafi","sequence":"additional","affiliation":[]},{"given":"Hayg","family":"Dabag","sequence":"additional","affiliation":[]},{"given":"James","family":"Buckwalter","sequence":"additional","affiliation":[]},{"given":"Peter","family":"Asbeck","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"3","doi-asserted-by":"publisher","DOI":"10.1109\/CSICS.2011.6062465"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2009.2036323"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC.2003.1213929"},{"key":"7","first-page":"1","article-title":"94 GHz power combining power amplifier with +13 dBm saturated output power in 65 nm CMOS","author":"sandstrom","year":"2011","journal-title":"Proc of IEEE RFIC symp"},{"key":"6","first-page":"69","article-title":"A W-band power amplifier in 65 nm CMOS with 27 GHz bandwidth and 14.8 dBm saturated output power","author":"tsai","year":"2012","journal-title":"Proc of IEEE RFIC symp"},{"key":"5","first-page":"260","article-title":"A 1V 19.3 dBm 79 GHz power amplifier in 65 nm CMOS","author":"wang","year":"2012","journal-title":"Proc of IEEE ISSCC"},{"key":"4","first-page":"57","article-title":"A 34% PAE, 18.6 dBm 42-45 GHz Stacked Power Amplifier in 45 nm SOI CMOS","author":"agah","year":"2012","journal-title":"Proc of IEEE RFIC symp"},{"key":"8","first-page":"137","article-title":"A W-band current combined power amplifier with 14.8dBm Psat and 9.4% maximum PAE in 65nm CMOS","author":"xu","year":"2011","journal-title":"Proc IEEE RFIC"}],"event":{"name":"2013 IEEE Radio and Wireless Symposium (RWS)","start":{"date-parts":[[2013,1,20]]},"location":"Austin, TX, USA","end":{"date-parts":[[2013,1,23]]}},"container-title":["2013 IEEE Radio and Wireless Symposium"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6481081\/6486607\/06486706.pdf?arnumber=6486706","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,22]],"date-time":"2017-03-22T19:00:28Z","timestamp":1490209228000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6486706\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,1]]},"references-count":8,"URL":"https:\/\/doi.org\/10.1109\/rws.2013.6486706","relation":{},"subject":[],"published":{"date-parts":[[2013,1]]}}}