{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T01:19:22Z","timestamp":1740100762325,"version":"3.37.3"},"reference-count":11,"publisher":"IEEE","license":[{"start":{"date-parts":[[2022,6,12]],"date-time":"2022-06-12T00:00:00Z","timestamp":1654992000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,6,12]],"date-time":"2022-06-12T00:00:00Z","timestamp":1654992000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100011011","name":"Junta de Andaluc\u00eda","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100011011","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022,6,12]]},"DOI":"10.1109\/smacd55068.2022.9816234","type":"proceedings-article","created":{"date-parts":[[2022,7,11]],"date-time":"2022-07-11T20:02:28Z","timestamp":1657569748000},"page":"1-4","source":"Crossref","is-referenced-by-count":0,"title":["A systematic approach to RTN parameter fitting based on the Maximum Current Fluctuation"],"prefix":"10.1109","author":[{"given":"P.","family":"Saraza-Canflanca","sequence":"first","affiliation":[{"name":"IMSE-CNM (CSIC and Universidad de Sevilla),Instituto de Microelectrónica de Sevilla,Sevilla,Spain"}]},{"given":"J.","family":"Martin-Martinez","sequence":"additional","affiliation":[{"name":"Universitat Autònoma de Barcelona (UAB),Electronic Engineering Department (REDEC) group,Barcelona,Spain"}]},{"given":"E.","family":"Roca","sequence":"additional","affiliation":[{"name":"IMSE-CNM (CSIC and Universidad de Sevilla),Instituto de Microelectrónica de Sevilla,Sevilla,Spain"}]},{"given":"R.","family":"Castro-Lopez","sequence":"additional","affiliation":[{"name":"IMSE-CNM (CSIC and Universidad de Sevilla),Instituto de Microelectrónica de Sevilla,Sevilla,Spain"}]},{"given":"R.","family":"Rodriguez","sequence":"additional","affiliation":[{"name":"Universitat Autònoma de Barcelona (UAB),Electronic Engineering Department (REDEC) group,Barcelona,Spain"}]},{"given":"M.","family":"Nafria","sequence":"additional","affiliation":[{"name":"Universitat Autònoma de Barcelona (UAB),Electronic Engineering Department (REDEC) group,Barcelona,Spain"}]},{"given":"F.V.","family":"Fernandez","sequence":"additional","affiliation":[{"name":"IMSE-CNM (CSIC and Universidad de Sevilla),Instituto de Microelectrónica de Sevilla,Sevilla,Spain"}]}],"member":"263","reference":[{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424235"},{"key":"ref3","doi-asserted-by":"crossref","first-page":"1725","DOI":"10.1109\/TED.2014.2368191","article-title":"Impacts of random telegraph noise (RTN) on digital circuits","volume":"62","author":"luo","year":"2015","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TIM.2019.2906415"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424230"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ICNN.1995.488968"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/j.vlsi.2020.02.002"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2021.3086448"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2014.2304673"},{"key":"ref2","first-page":"541","article-title":"Impact of threshold voltage fluctuation due to random telegraph noise on scaled-down SRAM","author":"tega","year":"2008","journal-title":"Proc IEEE International Reliability Physics Symposium (IRPS)"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2018.2881923"},{"key":"ref1","first-page":"50","article-title":"Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm","author":"tega","year":"2009","journal-title":"IEEE Symposium on VLSI Technology"}],"event":{"name":"2022 18th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","start":{"date-parts":[[2022,6,12]]},"location":"Villasimius, Italy","end":{"date-parts":[[2022,6,15]]}},"container-title":["2022 18th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/9816063\/9816175\/09816234.pdf?arnumber=9816234","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,8,8]],"date-time":"2022-08-08T20:02:38Z","timestamp":1659988958000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9816234\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,6,12]]},"references-count":11,"URL":"https:\/\/doi.org\/10.1109\/smacd55068.2022.9816234","relation":{},"subject":[],"published":{"date-parts":[[2022,6,12]]}}}