{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,3]],"date-time":"2026-06-03T17:57:48Z","timestamp":1780509468485,"version":"3.54.1"},"reference-count":28,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2010,9]]},"DOI":"10.1109\/socc.2010.5784635","type":"proceedings-article","created":{"date-parts":[[2011,6,10]],"date-time":"2011-06-10T11:57:50Z","timestamp":1307707070000},"page":"71-76","source":"Crossref","is-referenced-by-count":8,"title":["A 1 ppm\/°C bandgap voltage reference with new second-order Taylor curvature compensation"],"prefix":"10.1109","author":[{"given":"Ralph","family":"Oberhuber","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Rahul","family":"Prakash","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Vadim","family":"Ivanov","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"19","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2003.813286"},{"key":"17","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2002.803055"},{"key":"18","article-title":"A 2-V 23-\/spl mu\/A 5.3-ppm\/\/spl deg\/C curvature-compensated CMOS bandgap voltage reference","volume":"38","author":"leung","year":"2003","journal-title":"IEEE JSSC"},{"key":"15","article-title":"A sub-1-V 15-ppm\/\ufffdC C MOS bandgap voltage reference without requiring low threshold voltage device","volume":"37","author":"leung","year":"2002","journal-title":"IEEE JSSC"},{"key":"16","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2002.1015695"},{"key":"13","doi-asserted-by":"publisher","DOI":"10.1109\/4.974548"},{"key":"14","article-title":"A 1.8-V M modulator Interface for an electret microphone with on-chip reference","volume":"37","author":"bajdechl","year":"2002","journal-title":"IEEE JSSC"},{"key":"11","article-title":"A swltched-current, swltched-capacltor temperature sensor in 0.6-?m CMOS","volume":"33","author":"tuthlll","year":"1998","journal-title":"IEEE JSSC"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1109\/4.933463"},{"key":"21","doi-asserted-by":"publisher","DOI":"10.1109\/JSEN.2004.826742"},{"key":"20","article-title":"Temperature sensors and voltage references Implemented in CMOS technology","volume":"1","author":"meljer","year":"2001","journal-title":"IEEE Sensors Journal"},{"key":"22","author":"ivanov","year":"2004","journal-title":"I Fllanovsky Operational Amplifier Speed and Accuracy Improvement"},{"key":"23","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2005.1465471"},{"key":"24","first-page":"119135","article-title":"The CMOS gain-boosting technique","volume":"1","author":"buit g geelen","year":"1991","journal-title":"Analog Integrated Circuits and Signal Processing"},{"key":"25","first-page":"1250","article-title":"Active-bootstrapped gain-enhancement technique for low-voltage circuits","author":"seevlnck","year":"1998","journal-title":"IEEE TCAS-II"},{"key":"26","first-page":"1076","article-title":"Accurate analysis of temperature effects in l\/SUB c\/V\/SUB BE\/ characteristics with application to bandgap reference sources","author":"tsividis","year":"1980","journal-title":"IEEE JSSC"},{"key":"27","article-title":"Analog CMOS supports precision specs","author":"bold","year":"2003","journal-title":"EE Times"},{"key":"28","author":"pat","year":"0","journal-title":"Method And Circuit For Curvature Correction In Bandgap References With Asymmetric Curvature"},{"key":"3","article-title":"A low-voltage CMOS bandgap reference","volume":"14","author":"vlttoz","year":"1979","journal-title":"IEEE JSSC"},{"key":"2","article-title":"An Integrated bandgap reference","volume":"11","author":"meljer","year":"1976","journal-title":"IEEE JSSC"},{"key":"10","article-title":"Exponential curvature-compensated BICMOS bandgap references","volume":"29","author":"lee","year":"1994","journal-title":"IEEE JSSC"},{"key":"1","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.1974.1155346"},{"key":"7","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1984.1052260"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1983.1052013"},{"key":"5","article-title":"A, new curvature-corrected bandgap reference","volume":"17","author":"meljer","year":"1982","journal-title":"IEEE JSSC"},{"key":"4","article-title":"Measurement of the temperature dependence of the Ic\/Vbe characteristics of Integrated bipolar transistors","volume":"15","author":"meljer","year":"1980","journal-title":"IEEE JSSC"},{"key":"9","article-title":"A curvature-corrected lowvoltage bandgap reference","volume":"28","author":"gunawan","year":"1993","journal-title":"IEEE JSSC"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1985.1052470"}],"event":{"name":"2010 IEEE International SOC Conference (SOCC)","location":"Las Vegas, NV, USA","start":{"date-parts":[[2010,9,27]]},"end":{"date-parts":[[2010,9,29]]}},"container-title":["23rd IEEE International SOC Conference"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/5755492\/5784634\/05784635.pdf?arnumber=5784635","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,21]],"date-time":"2017-03-21T06:26:03Z","timestamp":1490077563000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/5784635\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,9]]},"references-count":28,"URL":"https:\/\/doi.org\/10.1109\/socc.2010.5784635","relation":{},"subject":[],"published":{"date-parts":[[2010,9]]}}}