{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,8,24]],"date-time":"2025-08-24T00:01:19Z","timestamp":1755993679812,"version":"3.44.0"},"reference-count":15,"publisher":"IEEE","license":[{"start":{"date-parts":[[2014,9,1]],"date-time":"2014-09-01T00:00:00Z","timestamp":1409529600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2014,9,1]],"date-time":"2014-09-01T00:00:00Z","timestamp":1409529600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2014,9]]},"DOI":"10.1109\/socc.2014.6948894","type":"proceedings-article","created":{"date-parts":[[2014,11,12]],"date-time":"2014-11-12T17:41:20Z","timestamp":1415814080000},"page":"24-28","source":"Crossref","is-referenced-by-count":3,"title":["Multilayer layer graphene nanoribbon flash memory: Analysis of programming and erasing operation"],"prefix":"10.1109","author":[{"given":"Nahid M.","family":"Hossain","sequence":"first","affiliation":[{"name":"Computer Science and Electrical Engineering, University of Missouri - Kansas City, 64110, USA"}]},{"given":"Md Belayat","family":"Hossain","sequence":"additional","affiliation":[{"name":"Applied Physics, Electronics & Communication Engineering, University of Dhaka, Bangladesh"}]},{"given":"Masud H","family":"Chowdhury","sequence":"additional","affiliation":[{"name":"Computer Science and Electrical Engineering, University of Missouri - Kansas City, 64110, USA"}]}],"member":"263","reference":[{"key":"15","doi-asserted-by":"publisher","DOI":"10.1021\/nn201809k"},{"key":"13","doi-asserted-by":"publisher","DOI":"10.1021\/nn202377f"},{"key":"14","article-title":"Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory device","volume":"4","author":"choi","year":"2013","journal-title":"Nature Communications"},{"journal-title":"Nonvolatile Memory Technologies With Emphasis on Flash A Comprehensive Guide to Understand and Using NVM Devices","year":"2008","author":"forni","key":"11"},{"key":"12","doi-asserted-by":"publisher","DOI":"10.1021\/nn3059136"},{"journal-title":"Thin Dielectrics for MOS Gate","article-title":"Saraswat","year":"0","key":"3"},{"key":"2","doi-asserted-by":"publisher","DOI":"10.1109\/16.8801"},{"year":"0","author":"dragica","key":"1"},{"key":"10","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2014.6865258"},{"key":"7","first-page":"1003","article-title":"Tunneling in thin mos structures","volume":"11","year":"1974","journal-title":"J Vac Sci Technol"},{"key":"6","doi-asserted-by":"publisher","DOI":"10.1063\/1.1657043"},{"key":"5","doi-asserted-by":"publisher","DOI":"10.1109\/55.568766"},{"key":"4","doi-asserted-by":"publisher","DOI":"10.1147\/rd.462.0213"},{"key":"9","doi-asserted-by":"publisher","DOI":"10.1016\/S0038-1101(01)00190-3"},{"key":"8","doi-asserted-by":"publisher","DOI":"10.1109\/5.622505"}],"event":{"name":"2014 27th IEEE International System-on-Chip Conference (SOCC)","start":{"date-parts":[[2014,9,2]]},"location":"Las Vegas, NV, USA","end":{"date-parts":[[2014,9,5]]}},"container-title":["2014 27th IEEE International System-on-Chip Conference (SOCC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/6937053\/6948870\/06948894.pdf?arnumber=6948894","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,8,23]],"date-time":"2025-08-23T00:23:02Z","timestamp":1755908582000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/6948894\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2014,9]]},"references-count":15,"URL":"https:\/\/doi.org\/10.1109\/socc.2014.6948894","relation":{},"subject":[],"published":{"date-parts":[[2014,9]]}}}