{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,29]],"date-time":"2025-09-29T11:59:45Z","timestamp":1759147185797},"reference-count":23,"publisher":"IEEE","content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2015,9]]},"DOI":"10.1109\/socc.2015.7406929","type":"proceedings-article","created":{"date-parts":[[2016,3,27]],"date-time":"2016-03-27T22:08:48Z","timestamp":1459116528000},"page":"149-153","source":"Crossref","is-referenced-by-count":3,"title":["Low-voltage 9T FinFETSRAM cell for low-power applications"],"prefix":"10.1109","author":[{"given":"Farshad","family":"Moradi","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mohammad","family":"Tohidi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2013.09.009"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2008.4586011"},{"key":"ref12","article-title":"A configurable SRAM with constant-negative-level write buffer for low-voltage operation with 0.149um2 cell in 32nm high-k metal-gate CMOS","author":"fujimura","year":"2010","journal-title":"ISSCC"},{"key":"ref13","article-title":"Multi-gate devices for the 32 nm technology node and beyond","author":"collaert","year":"2007","journal-title":"ESSDERC"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.1994.324398"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.1994.383463"},{"key":"ref16","article-title":"A dynamic-threshold MOSFET for ultra-low voltage operation","author":"assaderaghi","year":"1994","journal-title":"IEDM"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2004.835022"},{"key":"ref18","article-title":"Sub-50 nm FinFET: PMOS","author":"huang","year":"1999","journal-title":"IEDM"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2169678"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2012.2187474"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2006.877276"},{"key":"ref6","article-title":"65nm sub-threshold 11 T -SRAM for ultra-low voltage applications","author":"moradi","year":"2008","journal-title":"IEEE SOCC"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2008.2011972"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ICCD.2011.6081419"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2010.5450536"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2007.908005"},{"key":"ref1","article-title":"Scaling, power, and the future of MOS","author":"horowitz","year":"2005","journal-title":"IEDM"},{"key":"ref9","first-page":"371","article-title":"Process variations in sub-threshold SRAM cells in 65 nm CMOS","author":"moradi","year":"0"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2283235"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2004.1346592"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2005.1494078"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1987.1052809"}],"event":{"name":"2015 28th IEEE International System-on-Chip Conference (SOCC)","start":{"date-parts":[[2015,9,8]]},"location":"Beijing, China","end":{"date-parts":[[2015,9,11]]}},"container-title":["2015 28th IEEE International System-on-Chip Conference (SOCC)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/7363404\/7406870\/07406929.pdf?arnumber=7406929","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,3,22]],"date-time":"2017-03-22T20:43:13Z","timestamp":1490215393000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7406929\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,9]]},"references-count":23,"URL":"https:\/\/doi.org\/10.1109\/socc.2015.7406929","relation":{},"subject":[],"published":{"date-parts":[[2015,9]]}}}