{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,18]],"date-time":"2026-08-18T00:27:35Z","timestamp":1787012855609,"version":"build-2736575974"},"reference-count":41,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"5","license":[{"start":{"date-parts":[[2021,5,1]],"date-time":"2021-05-01T00:00:00Z","timestamp":1619827200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2021,5,1]],"date-time":"2021-05-01T00:00:00Z","timestamp":1619827200000},"content-version":"am","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61722406"],"award-info":[{"award-number":["61722406"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61751401"],"award-info":[{"award-number":["61751401"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Comput."],"published-print":{"date-parts":[[2021,5,1]]},"DOI":"10.1109\/tc.2020.2996747","type":"journal-article","created":{"date-parts":[[2020,5,22]],"date-time":"2020-05-22T16:41:00Z","timestamp":1590165660000},"page":"775-788","source":"Crossref","is-referenced-by-count":11,"title":["Efficient Repair Analysis Algorithm Exploration for Memory With Redundancy and In-Memory ECC"],"prefix":"10.1109","volume":"70","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-0093-2794","authenticated-orcid":false,"given":"Minjie","family":"Lv","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2153-2906","authenticated-orcid":false,"given":"Hongbin","family":"Sun","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1906-2327","authenticated-orcid":false,"given":"Jingmin","family":"Xin","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1608-8257","authenticated-orcid":false,"given":"Nanning","family":"Zheng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2011.2106812"},{"key":"ref38","doi-asserted-by":"crossref","first-page":"91","DOI":"10.1109\/ETS.2007.10","article-title":"An integrated built-in test and repair approach for memories with 2D redundancy","author":"ohler","year":"2007","journal-title":"Proc IEEE Eur Test Symp"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1145\/2971481"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2017.2760505"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.4218\/etrij.13.0112.0467"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1145\/2485922.2485929"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/TEST.2000.894250"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/TR.2003.821925"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/12.73586"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/TR.2006.874942"},{"key":"ref10","first-page":"175","article-title":"Defect analysis system speeds test and repair of redundant memories","volume":"57","author":"tarr","year":"1984","journal-title":"Electronics"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2010.2044846"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/MDT.1985.294737"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/MDT.1987.295111"},{"key":"ref13","first-page":"478","article-title":"A fast redundancy analysis algorithm in ATE for repairing faulty memories","volume":"34","author":"cho","year":"2012","journal-title":"ETRI J"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1145\/3007787.3001174"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2015.7056058"},{"key":"ref16","article-title":"Co-architecting controllers and DRAM to enhance DRAM process scaling","author":"kang","year":"2014","journal-title":"Proc Memory Forum"},{"key":"ref17","article-title":"Low Power Double Date Rate 4 (LPDDR4)","year":"0"},{"key":"ref18","first-page":"276","article-title":"Understanding DDR4 in pursuit of in-DRAM ECC","author":"kwon","year":"2014","journal-title":"Proc IEEE Int SOC Conf"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2014.2353799"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/4.62132"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/55.46938"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-662-04478-0_6"},{"key":"ref3","first-page":"111","article-title":"Cosmic rays don’t strike twice: Understanding the nature of DRAM errors and the implications for system design","author":"hwang","year":"2012","journal-title":"Proc Symp Architect Support Programming Lang Operat Syst"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/66.388016"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2018.00064"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4419-7958-2_2"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/12.481492"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TC.2017.2667645"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2017.30"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/12.21142"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2010.5703348"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/DSN.2019.00017"},{"key":"ref22","first-page":"206","article-title":"A 16 Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10nm class DRAM process","author":"chun","year":"2018","journal-title":"Proc IEEE Int Solid-State Circuits Conf"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2017.7870427"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/ISAS.2011.5960927"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1147\/rd.285.0636"},{"key":"ref23","first-page":"392","article-title":"A 4.8 Gb\/s\/pin 2Gb LPDDR4 SDRAM with sub-100$\\mu$?A self-refresh current for IoT applications","author":"kwak","year":"2017","journal-title":"Proc IEEE Int Solid-State Circuits Conf"},{"key":"ref26","first-page":"81","article-title":"An integrated ECC and redundancy repair scheme for memory reliability enhancement","author":"su","year":"2005","journal-title":"Proc IEEE Int Symp Defect Fault Tolerance VLSI Syst"},{"key":"ref25","first-page":"34","article-title":"A low power and highly reliable 400 Mbps mobile DDR SDRAM with on-chip distributed ECC","author":"kim","year":"2007","journal-title":"Proc IEEE Asian Solid-State Circuits Conf"}],"container-title":["IEEE Transactions on Computers"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/12\/9397750\/09099028.pdf?arnumber=9099028","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,26]],"date-time":"2022-01-26T12:40:19Z","timestamp":1643200819000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9099028\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,5,1]]},"references-count":41,"journal-issue":{"issue":"5"},"URL":"https:\/\/doi.org\/10.1109\/tc.2020.2996747","relation":{},"ISSN":["0018-9340","1557-9956","2326-3814"],"issn-type":[{"value":"0018-9340","type":"print"},{"value":"1557-9956","type":"electronic"},{"value":"2326-3814","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,5,1]]}}}