{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,9,13]],"date-time":"2023-09-13T17:50:24Z","timestamp":1694627424433},"reference-count":16,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"2","license":[{"start":{"date-parts":[[1983,4,1]],"date-time":"1983-04-01T00:00:00Z","timestamp":418003200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst."],"published-print":{"date-parts":[[1983,4]]},"DOI":"10.1109\/tcad.1983.1270027","type":"journal-article","created":{"date-parts":[[2004,4,29]],"date-time":"2004-04-29T00:28:59Z","timestamp":1083198539000},"page":"111-116","source":"Crossref","is-referenced-by-count":13,"title":["An Efficient Numerical Algorithm for Simulation of MOS Capacitance"],"prefix":"10.1109","volume":"2","author":[{"given":"R.C.","family":"Jaeger","sequence":"first","affiliation":[]},{"given":"F.H.","family":"Gaensslen","sequence":"additional","affiliation":[]},{"given":"S.E.","family":"Diehl","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1980.19908"},{"key":"ref11","author":"sze","year":"1981","journal-title":"Physics of Semiconductor Devices"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1977.18712"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1063\/1.1652594"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1002\/j.1538-7305.1966.tb01689.x"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(79)90096-0"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(81)90084-8"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1002\/pssb.19630030309"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1965.15476"},{"key":"ref6","author":"cobbold","year":"1970","journal-title":"Theory and Applications of Field-Effect Transistors"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(66)90061-X"},{"key":"ref8","doi-asserted-by":"crossref","first-page":"914","DOI":"10.1109\/T-ED.1980.19956","article-title":"simulation of impurity freezeout through numerical solution of poisson's equation with application to mos device behavior","volume":"27","author":"jaeger","year":"1980","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref7","author":"richman","year":"1973","journal-title":"MOS Field-Effect Transistors and Integrated Circuits"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(65)90046-8"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.1982.1156349"},{"key":"ref9","doi-asserted-by":"crossref","first-page":"329","DOI":"10.1109\/T-ED.1975.18131","article-title":"computer solution of one-dimensional poisson's equation","volume":"22","author":"klopfenstein","year":"1975","journal-title":"IEEE Transactions on Electron Devices"}],"container-title":["IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/43\/28424\/01270027.pdf?arnumber=1270027","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,11,29]],"date-time":"2021-11-29T20:39:40Z","timestamp":1638218380000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/1270027\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1983,4]]},"references-count":16,"journal-issue":{"issue":"2","published-print":{"date-parts":[[1983,4]]}},"URL":"https:\/\/doi.org\/10.1109\/tcad.1983.1270027","relation":{},"ISSN":["0278-0070"],"issn-type":[{"value":"0278-0070","type":"print"}],"subject":[],"published":{"date-parts":[[1983,4]]}}}