{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,6]],"date-time":"2026-04-06T05:47:43Z","timestamp":1775454463404,"version":"3.50.1"},"reference-count":20,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"1","license":[{"start":{"date-parts":[[1985,1,1]],"date-time":"1985-01-01T00:00:00Z","timestamp":473385600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst."],"published-print":{"date-parts":[[1985,1]]},"DOI":"10.1109\/tcad.1985.1270097","type":"journal-article","created":{"date-parts":[[2004,4,29]],"date-time":"2004-04-29T00:28:59Z","timestamp":1083198539000},"page":"41-53","source":"Crossref","is-referenced-by-count":26,"title":["Finite-Element Simulation of Local Oxidation of Silicon"],"prefix":"10.1109","volume":"4","author":[{"given":"A.","family":"Poncet","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","article-title":"Sealedinterface local oxidation technology","volume":"sc 17","author":"hui","year":"1982","journal-title":"IEEE J Solid-State Circuits"},{"key":"ref11","article-title":"A viscous flow model to explain the appearance of high density thermal SiO<subscript>2<\/subscript> at low oxidation temperatures","volume":"129","author":"irene","year":"1982","journal-title":"J Electrochem Soc Solid-State Sci Tech"},{"key":"ref12","article-title":"Two-dimensional simulation of local oxidation","author":"chin","year":"1982","journal-title":"Conf on Numerical Simulation of VLSI Devices"},{"key":"ref13","doi-asserted-by":"crossref","first-page":"228","DOI":"10.1109\/IEDM.1982.190259","article-title":"stresses in local oxidation","author":"chin","year":"1982","journal-title":"1982 International Electron Devices Meeting"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1149\/1.2124118"},{"key":"ref15","volume":"2","author":"temam","year":"1979","journal-title":"Studies in Mathematics and its Applications"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1137\/1021028"},{"key":"ref17","author":"poncet","year":"1979","journal-title":"Autour de l'\ufffdcriture d'un code d'\ufffdl\ufffdments finis"},{"key":"ref18","author":"chin","year":"1983","journal-title":"Two-dimensional oxidation"},{"key":"ref19","article-title":"Diffusion d'impuret\ufffds avec oxydation","author":"gerodolle","year":"1983","journal-title":"6th Int Conf on Computing Methods in Applied Sciences and Engineering"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1007\/BF02663273"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1149\/1.2134428"},{"key":"ref6","article-title":"Thermal oxidation kinetics of silicon in pyrogenic H<subscript>2<\/subscript>O an 5% HCL\/H<subscript>2<\/subscript>O mixtures","volume":"125","author":"deal","year":"1978","journal-title":"J Electrochem Soc Solid-State Sci Tech"},{"key":"ref5","article-title":"Kinetics of the thermal oxidation of silicon in O<subscript>2<\/subscript>\/H<subscript>2<\/subscript>O and O<subscript>2<\/subscript>\/Cl<subscript>2<\/subscript> mixtures","volume":"125","author":"deal","year":"1975","journal-title":"J Electrochem Soc Solid-State Sci Tech"},{"key":"ref8","article-title":"Finite element analysis of steades-state elastovisco-plastic flow by the initial stress-rate method","volume":"12","author":"dawson","year":"1978","journal-title":"Int J Num Meth Eng"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1063\/1.90409"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1063\/1.1661935"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1713945"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1063\/1.90905"},{"key":"ref20","doi-asserted-by":"crossref","DOI":"10.1007\/978-1-4612-6226-8","volume":"29","author":"de beubeke","year":"1979","journal-title":"Appl Math Sci"}],"container-title":["IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/43\/28431\/01270097.pdf?arnumber=1270097","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,11,29]],"date-time":"2021-11-29T20:39:41Z","timestamp":1638218381000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/1270097\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1985,1]]},"references-count":20,"journal-issue":{"issue":"1","published-print":{"date-parts":[[1985,1]]}},"URL":"https:\/\/doi.org\/10.1109\/tcad.1985.1270097","relation":{},"ISSN":["0278-0070"],"issn-type":[{"value":"0278-0070","type":"print"}],"subject":[],"published":{"date-parts":[[1985,1]]}}}