{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,25]],"date-time":"2026-01-25T08:22:40Z","timestamp":1769329360508,"version":"3.49.0"},"reference-count":16,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"4","license":[{"start":{"date-parts":[[1985,10,1]],"date-time":"1985-10-01T00:00:00Z","timestamp":496972800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst."],"published-print":{"date-parts":[[1985,10]]},"DOI":"10.1109\/tcad.1985.1270151","type":"journal-article","created":{"date-parts":[[2004,4,29]],"date-time":"2004-04-29T00:28:59Z","timestamp":1083198539000},"page":"520-526","source":"Crossref","is-referenced-by-count":16,"title":["A General Control-Volume Formulation for Modeling Impact Ionization in Semiconductor Transport"],"prefix":"10.1109","volume":"4","author":[{"given":"S.E.","family":"Laux","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"B.M.","family":"Grossman","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1969.16566"},{"key":"ref11","first-page":"135","article-title":"Application of the finite element method to semiconductor transport","author":"cottrell","year":"1976","journal-title":"Tenth Asilomar Conf on Circuits Systems and Computers"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1147\/rd.293.0289"},{"key":"ref13","author":"sze","year":"1981","journal-title":"Physics of Semiconductor Devices"},{"key":"ref14","doi-asserted-by":"crossref","first-page":"1092","DOI":"10.1109\/T-ED.1983.21263","article-title":"numerical solution of the semiconductor transport equations with current boundary conditions","volume":"30","author":"grossman","year":"1983","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref15","doi-asserted-by":"crossref","first-page":"84","DOI":"10.1109\/IEDM.1984.190648","article-title":"a study of avalanche breakdown in scaled n-mosfets","author":"laux","year":"1984","journal-title":"1984 International Electron Devices Meeting"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1147\/rd.293.0302"},{"key":"ref4","article-title":"Two-carrier simulation of complex device structures in minicomputer environments","author":"pinto","year":"1984","journal-title":"SIAM\/IEEE Second Conf Numerical Simulation VLSI Devices"},{"key":"ref3","doi-asserted-by":"crossref","first-page":"1031","DOI":"10.1109\/T-ED.1983.21257","article-title":"numerical methods for semiconductor device simulation","volume":"30","author":"bank","year":"1983","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(82)90105-8"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1978.19179"},{"key":"ref8","doi-asserted-by":"crossref","first-page":"1042","DOI":"10.1109\/T-ED.1983.21258","article-title":"numerical simulation of hot-electron phenomena","volume":"30","author":"watanabe","year":"1983","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.1982.1269997"},{"key":"ref2","first-page":"697","author":"grossman","year":"1984","journal-title":"Computing Methods in Applied Science and Engineering VI"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1147\/rd.254.0218"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1063\/1.1754731"}],"container-title":["IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/43\/28434\/01270151.pdf?arnumber=1270151","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,11,29]],"date-time":"2021-11-29T20:39:43Z","timestamp":1638218383000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/1270151\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1985,10]]},"references-count":16,"journal-issue":{"issue":"4","published-print":{"date-parts":[[1985,10]]}},"URL":"https:\/\/doi.org\/10.1109\/tcad.1985.1270151","relation":{},"ISSN":["0278-0070"],"issn-type":[{"value":"0278-0070","type":"print"}],"subject":[],"published":{"date-parts":[[1985,10]]}}}