{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,9,13]],"date-time":"2023-09-13T17:50:39Z","timestamp":1694627439810},"reference-count":27,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"4","license":[{"start":{"date-parts":[[1985,10,1]],"date-time":"1985-10-01T00:00:00Z","timestamp":496972800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst."],"published-print":{"date-parts":[[1985,10]]},"DOI":"10.1109\/tcad.1985.1270156","type":"journal-article","created":{"date-parts":[[2004,4,29]],"date-time":"2004-04-29T00:28:59Z","timestamp":1083198539000},"page":"546-553","source":"Crossref","is-referenced-by-count":1,"title":["A Numerical Solution of Poisson's Equation with Application to C-V Analysis of III-V Heterojunction Capacitors"],"prefix":"10.1109","volume":"4","author":[{"given":"J.L.","family":"Gray","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"M.S.","family":"Lundstrom","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.33.827"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1063\/1.331665"},{"key":"ref12","author":"sze","year":"1981","journal-title":"Physics of Semiconductor Devices"},{"key":"ref13","author":"casey","year":"1978","journal-title":"Heterostructure Lasers"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1016\/0022-3697(70)90001-6"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(81)90195-7"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1063\/1.331534"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1063\/1.93302"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.22.1502"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1063\/1.95096"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1063\/1.91467"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(78)90272-1"},{"key":"ref3","doi-asserted-by":"crossref","first-page":"1520","DOI":"10.1109\/T-ED.1980.20066","article-title":"nonplanar vlsi device analysis using the solution of poisson's equation","volume":"27","author":"greenfield","year":"1980","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref6","doi-asserted-by":"crossref","first-page":"363","DOI":"10.1109\/T-ED.1977.18742","article-title":"a computer analysis of heterojunction and graded composition solar cells","volume":"24","author":"sutherland","year":"1977","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1063\/1.94149"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(82)90195-2"},{"key":"ref7","doi-asserted-by":"crossref","first-page":"1151","DOI":"10.1109\/T-ED.1983.21271","article-title":"numerical analysis of heterostructure semiconductor devices","volume":"30","author":"lundstrom","year":"1983","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref2","doi-asserted-by":"crossref","first-page":"914","DOI":"10.1109\/T-ED.1980.19956","article-title":"simulation of impurity freezeout through numerical solution of poisson's equation with application to mos device behavior","volume":"27","author":"jaeger","year":"1980","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref9","author":"nussbaum","year":"1962","journal-title":"Semiconductor Device Physics"},{"key":"ref1","doi-asserted-by":"crossref","first-page":"329","DOI":"10.1109\/T-ED.1975.18131","article-title":"computer solution of one-dimensional poisson's equation","volume":"22","author":"klopfenstein","year":"1975","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.30.4481"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1063\/1.95572"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1063\/1.95637"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1063\/1.326329"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1016\/0038-1101(81)90077-0"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1007\/BF02656681"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1063\/1.1663500"}],"container-title":["IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/43\/28434\/01270156.pdf?arnumber=1270156","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,11,29]],"date-time":"2021-11-29T20:39:43Z","timestamp":1638218383000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/1270156\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1985,10]]},"references-count":27,"journal-issue":{"issue":"4","published-print":{"date-parts":[[1985,10]]}},"URL":"https:\/\/doi.org\/10.1109\/tcad.1985.1270156","relation":{},"ISSN":["0278-0070"],"issn-type":[{"value":"0278-0070","type":"print"}],"subject":[],"published":{"date-parts":[[1985,10]]}}}