{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,9,13]],"date-time":"2023-09-13T17:50:58Z","timestamp":1694627458860},"reference-count":20,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"5","license":[{"start":{"date-parts":[[1987,9,1]],"date-time":"1987-09-01T00:00:00Z","timestamp":557452800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst."],"published-print":{"date-parts":[[1987,9]]},"DOI":"10.1109\/tcad.1987.1270330","type":"journal-article","created":{"date-parts":[[2004,4,28]],"date-time":"2004-04-28T20:28:59Z","timestamp":1083184139000},"page":"879-885","source":"Crossref","is-referenced-by-count":12,"title":["Sensitivity Analysis for Device Design"],"prefix":"10.1109","volume":"6","author":[{"given":"A.","family":"Gnudi","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"P.","family":"Ciampolini","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"R.","family":"Guerrieri","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"M.","family":"Rudan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"G.","family":"Baccarani","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","author":"varga","year":"1962","journal-title":"Matrix Iterative Analysis"},{"key":"ref11","first-page":"149","article-title":"Numerical solution of the quasi linear Poisson's equation in a nonuniform triangle mesh","volume":"2","author":"winslow","year":"1967","journal-title":"J Computational Phys"},{"key":"ref12","doi-asserted-by":"crossref","first-page":"669","DOI":"10.1109\/T-ED.1973.17727","article-title":"computer-aided two-dimensional analysis of bipolar transistors","volume":"20","author":"slotboom","year":"1973","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref13","doi-asserted-by":"crossref","first-page":"10","DOI":"10.1109\/PROC.1983.12524","article-title":"device modeling","volume":"71","author":"engl","year":"1983","journal-title":"Proceedings of the IEEE"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1985.22234"},{"key":"ref15","first-page":"3","article-title":"HFIELDS: A highly-flexible 2-D semiconductor-device analysis program","author":"baccarani","year":"1985","journal-title":"Proc Fourth Int Conf on the Numerical Analysis of Semiconductor Devices and Integrated Circuits"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.1985.1270151"},{"key":"ref17","first-page":"72","author":"mccartin","year":"1985","journal-title":"New Problems and New Solutions for Device and Process Modeling"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1969.16566"},{"key":"ref19","first-page":"31","article-title":"Two-dimensional static and transient simulation of mobile carrier transport in a semiconductor","author":"cottrell","year":"1979","journal-title":"Proc NASECODE I"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.1986.1270182"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.1986.1270178"},{"key":"ref6","doi-asserted-by":"crossref","first-page":"609","DOI":"10.1109\/TCAD.1985.1270161","article-title":"Transient sensitivity computation for MOSFET circuits","volume":"cad 4","author":"hoccvar","year":"1985","journal-title":"IEEE Trans Computer-Aided Design"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.1986.1270172"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1007\/978-94-009-7645-0_21"},{"key":"ref7","first-page":"107","author":"baccarani","year":"1986","journal-title":"Process and Device Modeling"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.1986.1270181"},{"key":"ref1","doi-asserted-by":"crossref","first-page":"40","DOI":"10.1109\/TCAD.1984.1270055","article-title":"FABRICS II: A statistically based IC fabrication process simulator","volume":"cad 3","author":"nassif","year":"1984","journal-title":"IEEE Trans Computer-Aided Design"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-7091-8752-4"},{"key":"ref20","doi-asserted-by":"crossref","first-page":"658","DOI":"10.1109\/T-ED.1983.21185","article-title":"a mobility model for carriers in the mos inversion layer","volume":"30","author":"yamaguchi","year":"1983","journal-title":"IEEE Transactions on Electron Devices"}],"container-title":["IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/5436380\/5436381\/05436696.pdf?arnumber=5436696","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,11,29]],"date-time":"2021-11-29T15:39:46Z","timestamp":1638200386000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/5436696\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[1987,9]]},"references-count":20,"journal-issue":{"issue":"5"},"URL":"https:\/\/doi.org\/10.1109\/tcad.1987.1270330","relation":{},"ISSN":["0278-0070","1937-4151"],"issn-type":[{"value":"0278-0070","type":"print"},{"value":"1937-4151","type":"electronic"}],"subject":[],"published":{"date-parts":[[1987,9]]}}}