{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,8,31]],"date-time":"2024-08-31T05:52:41Z","timestamp":1725083561138},"reference-count":22,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"8","license":[{"start":{"date-parts":[[2014,8,1]],"date-time":"2014-08-01T00:00:00Z","timestamp":1406851200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst."],"published-print":{"date-parts":[[2014,8]]},"DOI":"10.1109\/tcad.2014.2317571","type":"journal-article","created":{"date-parts":[[2014,7,15]],"date-time":"2014-07-15T18:24:19Z","timestamp":1405448659000},"page":"1159-1167","source":"Crossref","is-referenced-by-count":3,"title":["Modeling and Optimization Techniques for Yield-Aware SRAM Post-Silicon Tuning"],"prefix":"10.1109","volume":"33","author":[{"given":"Ashish K.","family":"Singh","sequence":"first","affiliation":[]},{"family":"Ku He","sequence":"additional","affiliation":[]},{"given":"Constantine","family":"Caramanis","sequence":"additional","affiliation":[]},{"given":"Michael","family":"Orshansky","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2008.2008808"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ICCD.2008.4751858"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1145\/1687399.1687517"},{"key":"ref13","first-page":"400","article-title":"Statistical modeling for the minimum standby supply voltage of a full SRAM array","author":"wang","year":"2007","journal-title":"Proc ESSCIRC"},{"key":"ref14","doi-asserted-by":"crossref","DOI":"10.1201\/EBK0824740993","author":"sniedovich","year":"2010","journal-title":"Dynamic Programming Foundations and Principles"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1145\/1393921.1393954"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4419-6606-3_8"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4419-6606-3_2"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4612-5320-4"},{"key":"ref19","first-page":"458","article-title":"A process-variation-tolerant dual-power-supply SRAM with $0.179~\\mu $ m 2 cell in 40nm CMOS using level-programmable wordline driver","author":"hirabayashi","year":"2009","journal-title":"Proc ISSCC"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2005.1609437"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2005.852295"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/DAC.2003.1219020"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2008.917960"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2008.915529"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/ASPDAC.2006.1594744"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2009.2025766"},{"key":"ref1","first-page":"93","article-title":"Managing process variation in Intel’s 45nm CMOS technology","volume":"12","author":"kuhn","year":"2008","journal-title":"Intel Technol J"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2007.906995"},{"key":"ref20","first-page":"384","article-title":"65nm low-power high-density SRAM operable at 1.0V under $3\\sigma $ systematic variation using separate Vth monitoring and body bias for NMOS and PMOS","author":"yamaoka","year":"2008","journal-title":"Proc IEEE ISSCC"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.884077"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1987.1052809"}],"container-title":["IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/43\/6856247\/06856309.pdf?arnumber=6856309","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T16:21:02Z","timestamp":1642004462000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6856309\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2014,8]]},"references-count":22,"journal-issue":{"issue":"8"},"URL":"https:\/\/doi.org\/10.1109\/tcad.2014.2317571","relation":{},"ISSN":["0278-0070","1937-4151"],"issn-type":[{"value":"0278-0070","type":"print"},{"value":"1937-4151","type":"electronic"}],"subject":[],"published":{"date-parts":[[2014,8]]}}}