{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,18]],"date-time":"2026-01-18T07:16:04Z","timestamp":1768720564041,"version":"3.49.0"},"reference-count":44,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"1","license":[{"start":{"date-parts":[[2016,1,1]],"date-time":"2016-01-01T00:00:00Z","timestamp":1451606400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"funder":[{"DOI":"10.13039\/501100012226","name":"Fundamental Research Funds for the Central Universities","doi-asserted-by":"crossref","award":["106112014CDJZR185502"],"award-info":[{"award-number":["106112014CDJZR185502"]}],"id":[{"id":"10.13039\/501100012226","id-type":"DOI","asserted-by":"crossref"}]},{"DOI":"10.13039\/501100012226","name":"Fundamental Research Funds for the Central Universities","doi-asserted-by":"crossref","award":["CDJZR14185501"],"award-info":[{"award-number":["CDJZR14185501"]}],"id":[{"id":"10.13039\/501100012226","id-type":"DOI","asserted-by":"crossref"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61402059"],"award-info":[{"award-number":["61402059"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61472052"],"award-info":[{"award-number":["61472052"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61173014"],"award-info":[{"award-number":["61173014"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61309004"],"award-info":[{"award-number":["61309004"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"National 863 Program","award":["2013AA013202"],"award-info":[{"award-number":["2013AA013202"]}]},{"name":"National 863 Program","award":["2015AA015304"],"award-info":[{"award-number":["2015AA015304"]}]},{"name":"Chongqing High-Tech Research Program","award":["cstc2012ggC40005"],"award-info":[{"award-number":["cstc2012ggC40005"]}]},{"name":"Chongqing High-Tech Research Program","award":["cstc2014yykfB40007"],"award-info":[{"award-number":["cstc2014yykfB40007"]}]},{"name":"Chongqing High-Tech Research Program","award":["cstc2013jcyjA40025"],"award-info":[{"award-number":["cstc2013jcyjA40025"]}]},{"name":"Doctoral Program of Higher Education of China","award":["20130191120030"],"award-info":[{"award-number":["20130191120030"]}]},{"DOI":"10.13039\/100007567","name":"City University of Hong Kong","doi-asserted-by":"publisher","award":["7004221"],"award-info":[{"award-number":["7004221"]}],"id":[{"id":"10.13039\/100007567","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst."],"published-print":{"date-parts":[[2016,1]]},"DOI":"10.1109\/tcad.2015.2453369","type":"journal-article","created":{"date-parts":[[2015,7,8]],"date-time":"2015-07-08T18:39:16Z","timestamp":1436380756000},"page":"58-71","source":"Crossref","is-referenced-by-count":35,"title":["Retention Trimming for Lifetime Improvement of Flash Memory Storage Systems"],"prefix":"10.1109","volume":"35","author":[{"given":"Liang","family":"Shi","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6127-8469","authenticated-orcid":false,"given":"Kaijie","family":"Wu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mengying","family":"Zhao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chun Jason","family":"Xue","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Duo","family":"Liu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Edwin H.-M.","family":"Sha","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/4.475701"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/TC.2013.119"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/ICC.2012.6363639"},{"key":"ref32","first-page":"18","article-title":"Exploiting memory device wear-out dynamics to improve NAND flash memory system performance","author":"pan","year":"2011","journal-title":"Proc USENIX Conf File Storage Technol"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2012.6168954"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1145\/1519065.1519081"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/DAC.2014.6881473"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2013.2288691"},{"key":"ref35","year":"2009","journal-title":"3BIT\/CELL MLC NAND FLASH"},{"key":"ref34","year":"2007","journal-title":"OLTP Application I\/O"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TC.2010.126"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1145\/2155620.2155659"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1145\/2501626.2512467"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/ICCAD.2013.6691152"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/CODES-ISSS.2013.6658994"},{"key":"ref14","year":"2012","journal-title":"Samsung K9f8g08uxm Flash Memory Datasheet"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/ICCD.2014.6974682"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1002\/for.3980040103"},{"key":"ref17","first-page":"4","article-title":"Improving NAND endurance by dynamic program and erase scaling","author":"jeong","year":"2013","journal-title":"Proc 3rd USENIX Conf on Hot Topics in Storage and File Syst"},{"key":"ref18","first-page":"61","article-title":"Lifetime improvement of NAND flash-based storage systems using dynamic program and erase scaling","author":"jeong","year":"2014","journal-title":"Proc USENIX Conf File Storage Technol"},{"key":"ref19","first-page":"26","article-title":"Lifetime management of flash-based SSDS using recovery-aware dynamic throttling","author":"lee","year":"2012","journal-title":"Proc USENIX Conf File Storage Technol"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.2008.4558857"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2015.7056062"},{"key":"ref27","year":"2009","journal-title":"16nm MLC NAND The World&#x2019;s Most Advanced Process"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.7873\/DATE.2013.266"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ICCD.2012.6378623"},{"key":"ref29","article-title":"refresh SSDs: Enabling high endurance, low cost flash in datacenters","author":"mohan","year":"2012"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/ICCD.2013.6657034"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1145\/1244002.1244248"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1145\/2591971.2591994"},{"key":"ref2","first-page":"521","article-title":"Error patterns in MLC NAND flash memory: Measurement, characterization, and analysis","author":"cai","year":"2012","journal-title":"Proc Conf Design Autom Test Europe"},{"key":"ref9","first-page":"212","article-title":"Endurance enhancement of flash-memory storage systems: An efficient static wear leveling design","author":"chang","year":"2007","journal-title":"Proc Design Autom Conf"},{"key":"ref1","first-page":"57","article-title":"Design tradeoffs for SSD performance","author":"agrawal","year":"2008","journal-title":"Proc USENIX Annu Tech Conf"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1145\/1275986.1275990"},{"key":"ref22","first-page":"117","article-title":"Dual greedy: Adaptive garbage collection for page-mapping solid-state disks","author":"lin","year":"2012","journal-title":"Proc Conf Design Autom Test Europe"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.7873\/DATE.2015.0078"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1145\/2463209.2488937"},{"key":"ref24","first-page":"11","article-title":"Optimizing NAND flash-based SSDs via retention relaxation","author":"liu","year":"2012","journal-title":"Proc USENIX Conf File Storage Technol"},{"key":"ref41","year":"2013","journal-title":"Flash Management&#x2014;Why and How? A Detailed Overview of Flash Management Techniques"},{"key":"ref23","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1145\/2366231.2337161","article-title":"RAIDR: Retention-aware intelligent DRAM refresh","author":"liu","year":"2012","journal-title":"Proc Annu Int Symp Comput Archit"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1145\/2463209.2488936"},{"key":"ref26","year":"2011","journal-title":"Wear Leveling in Micron NAND Flash Memory"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1145\/2228360.2228401"},{"key":"ref25","author":"macaulay","year":"1931"}],"container-title":["IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/43\/7360959\/07152865.pdf?arnumber=7152865","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T15:58:01Z","timestamp":1642003081000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7152865\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,1]]},"references-count":44,"journal-issue":{"issue":"1"},"URL":"https:\/\/doi.org\/10.1109\/tcad.2015.2453369","relation":{},"ISSN":["0278-0070","1937-4151"],"issn-type":[{"value":"0278-0070","type":"print"},{"value":"1937-4151","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,1]]}}}