{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,3]],"date-time":"2026-03-03T11:51:38Z","timestamp":1772538698221,"version":"3.50.1"},"reference-count":55,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"4","license":[{"start":{"date-parts":[[2018,4,1]],"date-time":"2018-04-01T00:00:00Z","timestamp":1522540800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2018,4,1]],"date-time":"2018-04-01T00:00:00Z","timestamp":1522540800000},"content-version":"am","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2018,4,1]],"date-time":"2018-04-01T00:00:00Z","timestamp":1522540800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2018,4,1]],"date-time":"2018-04-01T00:00:00Z","timestamp":1522540800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100000001","name":"NSF","doi-asserted-by":"publisher","award":["CCF 07-46608"],"award-info":[{"award-number":["CCF 07-46608"]}],"id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100006011","name":"Babol Noshirvani University of Technology","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100006011","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst."],"published-print":{"date-parts":[[2018,4]]},"DOI":"10.1109\/tcad.2017.2729460","type":"journal-article","created":{"date-parts":[[2017,7,19]],"date-time":"2017-07-19T18:08:27Z","timestamp":1500487707000},"page":"820-831","source":"Crossref","is-referenced-by-count":13,"title":["Compact Modeling to Device- and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors"],"prefix":"10.1109","volume":"37","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-6290-9461","authenticated-orcid":false,"given":"Morteza","family":"Gholipour","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ying-Yu","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Deming","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1021\/nl4013166"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1021\/nn301320r"},{"key":"ref33","first-page":"19.4.1","article-title":"High-performance few-layer-MoS2 field-effect-transistor with record low contact-resistance","author":"liu","year":"2013","journal-title":"Proc IEEE Int Electron Devices Meeting"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2014.2365028"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1073\/pnas.0502848102"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.85.033305"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1021\/nl4014748"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2014.2328782"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2007.909030"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2013.30"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1021\/nl301702r"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1063\/1.4770313"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2010.279"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2535484"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2015.2418295"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1021\/nn203715c"},{"key":"ref22","first-page":"192","article-title":"High-performance MoS2 field-effect transistors enabled by chloride doping: Record low contact resistance (0.5 k \n$\\Omega.\\mu $\nm) and record high drain current (\n$460~\\mu $\nA\/\n$\\mu $\nm)","author":"yang","year":"2014","journal-title":"Symp VLSI Technol Dig Tech Papers"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1126\/science.aah4698"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1021\/acs.nanolett.5b00668"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1021\/nl503586v"},{"key":"ref26","first-page":"4.6.1","article-title":"Large-scale 2D electronics based on single-layer MoS2 grown by chemical vapor deposition","author":"wang","year":"2012","journal-title":"Tech Dig Int Electron Devices Meet (IEDM)"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1021\/nl302015v"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1016\/S0080-8784(08)60267-7"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1109\/16.974760"},{"key":"ref55","year":"2016","journal-title":"Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model 1 0 0"},{"key":"ref54","year":"2016","journal-title":"Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) HSPICE Model"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2014.2326622"},{"key":"ref52","year":"2014","journal-title":"Predictive Technology Model"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2007.901680"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2100045"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1088\/0022-3727\/48\/37\/375104"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2015.2406734"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2015.2469647"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1007\/s11467-009-0022-x"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/25\/11\/115702"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2012.2218283"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1021\/nl2018178"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1063\/1.4866872"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms2018"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1021\/nn401429w"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2896"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1021\/nn402954e"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1002\/smll.201370112"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1039\/c3tc00710c"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1002\/smll.201201224"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2547949"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ISLPED.2013.6629286"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1021\/nn303513c"},{"key":"ref45","article-title":"Small-geometry MOS transistors: Physics and modeling of surface-and buried-channel MOSFETs","author":"nguyen","year":"1985"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1142\/S012915641350002X"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1016\/j.apsusc.2008.02.150"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1038\/ncomms4087"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1021\/nl400778q"},{"key":"ref44","author":"taur","year":"2010","journal-title":"Fundamentals of Modern VLSI Devices"},{"key":"ref43","author":"kim","year":"2008","journal-title":"Notes on Fermi-Dirac Integrals"}],"container-title":["IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"],"original-title":[],"link":[{"URL":"http:\/\/ieeexplore.ieee.org\/ielaam\/43\/8319545\/7984874-aam.pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/43\/8319545\/07984874.pdf?arnumber=7984874","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,4,8]],"date-time":"2022-04-08T18:47:49Z","timestamp":1649443669000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/7984874\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,4]]},"references-count":55,"journal-issue":{"issue":"4"},"URL":"https:\/\/doi.org\/10.1109\/tcad.2017.2729460","relation":{},"ISSN":["0278-0070","1937-4151"],"issn-type":[{"value":"0278-0070","type":"print"},{"value":"1937-4151","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,4]]}}}