{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,25]],"date-time":"2026-03-25T15:47:39Z","timestamp":1774453659239,"version":"3.50.1"},"reference-count":35,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"4","license":[{"start":{"date-parts":[[2021,4,1]],"date-time":"2021-04-01T00:00:00Z","timestamp":1617235200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2021,4,1]],"date-time":"2021-04-01T00:00:00Z","timestamp":1617235200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2021,4,1]],"date-time":"2021-04-01T00:00:00Z","timestamp":1617235200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"name":"Basic Research Program of the National Research University Higher School of Economics","award":["TZ-94"],"award-info":[{"award-number":["TZ-94"]}]},{"DOI":"10.13039\/501100002261","name":"Russian Foundation for Basic Research","doi-asserted-by":"publisher","award":["18-07-00898"],"award-info":[{"award-number":["18-07-00898"]}],"id":[{"id":"10.13039\/501100002261","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"RFBR and NSFC","doi-asserted-by":"publisher","award":["20-57-53004"],"award-info":[{"award-number":["20-57-53004"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst."],"published-print":{"date-parts":[[2021,4]]},"DOI":"10.1109\/tcad.2020.3006044","type":"journal-article","created":{"date-parts":[[2020,6,30]],"date-time":"2020-06-30T20:53:56Z","timestamp":1593550436000},"page":"708-722","source":"Crossref","is-referenced-by-count":14,"title":["SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From \u2212200 \u00b0C to +300 \u00b0C)"],"prefix":"10.1109","volume":"40","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-7969-4786","authenticated-orcid":false,"given":"Konstantin O.","family":"Petrosyants","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6934-2071","authenticated-orcid":false,"given":"Lev M.","family":"Sambursky","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8638-8880","authenticated-orcid":false,"given":"Maxim V.","family":"Kozhukhov","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2146-0642","authenticated-orcid":false,"given":"Mamed R.","family":"Ismail-Zade","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8947-8227","authenticated-orcid":false,"given":"Igor A.","family":"Kharitonov","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4905-2744","authenticated-orcid":false,"given":"Bo","family":"Li","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2012.2206792"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2037381"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1016\/0011-2275(96)81102-7"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2004.836779"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/EIConRus.2017.7910582"},{"key":"ref34","first-page":"14","article-title":"Measuring currents below 4K","volume":"22","author":"ferrari","year":"2012","journal-title":"Cryogenic electronics"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1968.1049902"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1016\/0168-9002(96)00232-X"},{"key":"ref12","first-page":"81","article-title":"Modeling of temperature dependent IC-VBE characteristics of SiGe HBTs from 43–400K","author":"xu","year":"2008","journal-title":"Proc IEEE Bipolar\/BiCMOS Circuits Technol Meeting (BCTM)"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/16.83736"},{"key":"ref14","year":"2004","journal-title":"BSIMSOI3 2 MOSFET Model User’s Manual BSIM Group"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2010.06.005"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2017.05.018"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1016\/j.nima.2008.03.103"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.2009.2038697"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/EWDTS.2016.7807724"},{"key":"ref28","first-page":"1","article-title":"Automation of parameter extraction procedure for Si JFET SPICE model in the ?200 … + 110°C temperature range","author":"petrosyants","year":"2008","journal-title":"Proc IEEE Electron Netw Technol (MWENT)"},{"key":"ref4","first-page":"2538","article-title":"Silicon-on-insulator based high temperature electronics for automotive applications","author":"blalock","year":"2008","journal-title":"Proc IEEE Int Symp Ind Electron"},{"key":"ref27","doi-asserted-by":"crossref","first-page":"160","DOI":"10.1109\/T-ED.1987.22902","article-title":"gaas fet device and circuit simulation in spice","volume":"34","author":"statz","year":"1987","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref3","first-page":"1","article-title":"Highly reliable electronics for harsh environments: Requirements and application in the oil & gas industry, Fraunhofer","author":"hild","year":"2014","journal-title":"Proc IMS Workshop High Temp Electron"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.cryogenics.2013.10.003"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/SIBCON.2016.7491840"},{"key":"ref5","first-page":"1","article-title":"SiGe HBT compact modeling for extreme temperatures","author":"woods","year":"2012","journal-title":"Proc Int Semicond Device Res Symp"},{"key":"ref8","first-page":"333","article-title":"Compact modeling of SiGe HBTs over extreme temperature range","author":"niu","year":"2012","journal-title":"Handbook on Extreme Environment Electronics"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/THERMINIC.2017.8233824"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1016\/j.cryogenics.2005.12.002"},{"key":"ref9","author":"schmidt","year":"2014","journal-title":"Analog Circuit Design in PD-SOI CMOS Technology for High Temperatures Up to 400°C Using Reverse Body Biasing (RBB)"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1201\/b13001"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/SIBCON.2017.7998507"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/PESC.2008.4592722"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/COMPEL.2006.305677"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/JMEMS.2009.2021831"},{"key":"ref23","first-page":"1","article-title":"Modelling of silicon carbide JFET in SPICE","author":"bargie","year":"2017","journal-title":"Proc IEEE 21st Eur Microelectron Packag Conf (EMPC) Exhibit"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1088\/1674-1056\/25\/7\/078501"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/THERMINIC.2018.8593296"}],"container-title":["IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/43\/9381730\/09129757.pdf?arnumber=9129757","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,5,10]],"date-time":"2022-05-10T14:49:33Z","timestamp":1652194173000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9129757\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,4]]},"references-count":35,"journal-issue":{"issue":"4"},"URL":"https:\/\/doi.org\/10.1109\/tcad.2020.3006044","relation":{},"ISSN":["0278-0070","1937-4151"],"issn-type":[{"value":"0278-0070","type":"print"},{"value":"1937-4151","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,4]]}}}