{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,7,4]],"date-time":"2024-07-04T12:35:10Z","timestamp":1720096510047},"reference-count":42,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"6","license":[{"start":{"date-parts":[[2010,6,1]],"date-time":"2010-06-01T00:00:00Z","timestamp":1275350400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. I"],"published-print":{"date-parts":[[2010,6]]},"DOI":"10.1109\/tcsi.2009.2033528","type":"journal-article","created":{"date-parts":[[2010,1,26]],"date-time":"2010-01-26T14:14:53Z","timestamp":1264515293000},"page":"1298-1311","source":"Crossref","is-referenced-by-count":25,"title":["A Design-Oriented Soft Error Rate Variation Model Accounting for Both Die-to-Die and Within-Die Variations in Submicrometer CMOS SRAM Cells"],"prefix":"10.1109","volume":"57","author":[{"given":"Hassan","family":"Mostafa","sequence":"first","affiliation":[]},{"given":"Mohab","family":"Anis","sequence":"additional","affiliation":[]},{"given":"Mohamed","family":"Elmasry","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref39","first-page":"512","article-title":"correlation analysis of the statistical electrical parameter fluctuations in 50 nm mos transistors","author":"horstmann","year":"1998","journal-title":"Proc 35th Eur Solid-State Device Res Conf"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2005.855684"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2008.918141"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/92.645062"},{"key":"ref31","doi-asserted-by":"crossref","first-page":"5934","DOI":"10.1109\/ISCAS.2005.1465990","article-title":"approach for physical design in sub-100 nm era","author":"masuda","year":"2005","journal-title":"Proc IEEE Int Symp Circuits Syst (ISCAS)"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.1997.650512"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2006.888767"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/RECONF.2006.307765"},{"key":"ref35","doi-asserted-by":"crossref","first-page":"907","DOI":"10.1109\/TCSII.2008.923411","article-title":"numerical estimation of yield in sub-100-nm sram design using monte carlo simulation","volume":"55","author":"nho","year":"2008","journal-title":"IEEE Trans Circuits Syst II Exp Briefs"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2007.895613"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/7298.946456"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2005.852295"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1145\/775832.775920"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/4.982424"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2005.1568738"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1145\/1065579.1065780"},{"key":"ref15","year":"0","journal-title":"The International Technology Roadmap for Semiconductors"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/SOCC.2006.283890"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2007.912983"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2005.10.025"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/23.915368"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/4.52187"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1142\/6661"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.1983.4333183"},{"key":"ref3","author":"ma","year":"1989","journal-title":"Inonizing Radiation Effects in MOS Devices and Circuits"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2007.168"},{"key":"ref29","author":"taur","year":"1998","journal-title":"Fundamentals of Modern VLSI Devices"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/SOC.2003.1241499"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/23.903813"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/IOLTS.2008.12"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/IOLTS.2006.35"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/DSN.2002.1028924"},{"key":"ref1","first-page":"1023","article-title":"impact of process variation on soft error vulnerability for nanometer vlsi circuits","author":"ding","year":"2005","journal-title":"Proc ASICON"},{"key":"ref20","first-page":"294","article-title":"process impact on sram alpha-particle seu performance","author":"xu","year":"2004","journal-title":"Proc IEEE Int Reliab Phys Symp"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2008.4479727"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/ICCAD.2006.320052"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2008.923437"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/ICVD.2003.1183141"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1109\/IOLTS.2005.12"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2008.2006096"},{"key":"ref26","doi-asserted-by":"crossref","DOI":"10.1109\/9780470547182","author":"liu","year":"2001","journal-title":"MOSFET Models for SPICE Simulation Including BSIM3v3 and BSIM4"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/RELPHY.1994.307864"}],"container-title":["IEEE Transactions on Circuits and Systems I: Regular Papers"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx5\/8919\/5482395\/05395690.pdf?arnumber=5395690","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,10,11]],"date-time":"2021-10-11T01:00:13Z","timestamp":1633914013000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/5395690\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2010,6]]},"references-count":42,"journal-issue":{"issue":"6"},"URL":"https:\/\/doi.org\/10.1109\/tcsi.2009.2033528","relation":{},"ISSN":["1549-8328","1558-0806"],"issn-type":[{"value":"1549-8328","type":"print"},{"value":"1558-0806","type":"electronic"}],"subject":[],"published":{"date-parts":[[2010,6]]}}}