{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,6]],"date-time":"2025-12-06T17:07:47Z","timestamp":1765040867458,"version":"3.37.3"},"reference-count":55,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"5","license":[{"start":{"date-parts":[[2019,5,1]],"date-time":"2019-05-01T00:00:00Z","timestamp":1556668800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,5,1]],"date-time":"2019-05-01T00:00:00Z","timestamp":1556668800000},"content-version":"am","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,5,1]],"date-time":"2019-05-01T00:00:00Z","timestamp":1556668800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,5,1]],"date-time":"2019-05-01T00:00:00Z","timestamp":1556668800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"name":"an Innovative Project of Institute of Computing Technology, CAS","award":["5120186140"],"award-info":[{"award-number":["5120186140"]}]},{"name":"Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory","award":["61428060401162806001"],"award-info":[{"award-number":["61428060401162806001"]}]},{"DOI":"10.13039\/100000001","name":"National Science Foundation","doi-asserted-by":"publisher","award":["1640081"],"award-info":[{"award-number":["1640081"]}],"id":[{"id":"10.13039\/100000001","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/100000028","name":"Semiconductor Research Corporation","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000028","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. I"],"published-print":{"date-parts":[[2019,5]]},"DOI":"10.1109\/tcsi.2018.2874880","type":"journal-article","created":{"date-parts":[[2018,10,30]],"date-time":"2018-10-30T19:14:18Z","timestamp":1540926858000},"page":"1780-1793","source":"Crossref","is-referenced-by-count":30,"title":["Power and Area Efficient FPGA Building Blocks Based on Ferroelectric FETs"],"prefix":"10.1109","volume":"66","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-7337-1844","authenticated-orcid":false,"given":"Xiaoming","family":"Chen","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3628-3431","authenticated-orcid":false,"given":"Kai","family":"Ni","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7776-4306","authenticated-orcid":false,"given":"Michael T.","family":"Niemier","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0904-6681","authenticated-orcid":false,"given":"Yinhe","family":"Han","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6044-5173","authenticated-orcid":false,"given":"Suman","family":"Datta","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6636-9738","authenticated-orcid":false,"given":"Xiaobo Sharon","family":"Hu","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1145\/2897937.2898050"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/ISVLSI.2016.116"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/25\/5\/055005"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2018.8510622"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2829122"},{"key":"ref30","first-page":"1","article-title":"NCFET based logic for energy harvesting systems","author":"george","year":"2015","journal-title":"Proc SRC TECHCON"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.23919\/DATE.2017.7927219"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1145\/2966986.2967037"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/20.92290"},{"journal-title":"Berkeley Short-channel IGFET Model (BSIM)","year":"2017","key":"ref34"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1145\/503048.503052"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1145\/2684746.2689088"},{"key":"ref29","first-page":"11.5.1","article-title":"A 28 nm HKMG super low power embedded NVM technology based on ferroelectric FETs","author":"trentzsch","year":"2016","journal-title":"IEDM Tech Dig"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1561\/1000000005"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2006.884574"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2013.6724605"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIT.2017.7998160"},{"key":"ref21","first-page":"162","article-title":"Low voltage Ferroelectric FET with sub-100 nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory","author":"salvatore","year":"2008","journal-title":"Proc 35th Eur Solid-State Device Res Conf (ESSDERC)"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/28\/8\/085003"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1088\/2053-1583\/aa5c17"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2018.8351375"},{"key":"ref25","first-page":"1","article-title":"Low power negative capacitance FETs for future quantum-well body technology","author":"yeung","year":"2013","journal-title":"Proc IEEE Int Sym VLSI Tech Syst and Appl (VLSI-TSA)"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1109\/MSSC.2016.2546199"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1109\/TCAD.2012.2185930"},{"journal-title":"Advances and Trends of RRAM Technology","year":"2015","author":"jurczak","key":"ref55"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268425"},{"key":"ref53","first-page":"1","article-title":"Technology roadmap for 22 nm and beyond","author":"iwai","year":"2009","journal-title":"Proc 2nd Int Workshop Electron Devices Semicond Technol"},{"key":"ref52","first-page":"25","article-title":"Ferroelectricity in HfO2enables nonvolatile data storage in 28 nm HKMG","author":"muller","year":"2012","journal-title":"Proc Symp VLSI Technol (VLSIT)"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2015.2389260"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2010.2063444"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2797887"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.7567\/JJAP.52.04CM04"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/MWSCAS.2015.7282195"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2013.6571796"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2016.2625749"},{"key":"ref16","first-page":"334","article-title":"Area-efficient LUT circuit design based on asymmetry of MTJ’s current switching for a nonvolatile FPGA","author":"suzuki","year":"2012","journal-title":"Proc IEEE 55th Int Midwest Symp Circuits Syst (MWSCAS)"},{"key":"ref17","first-page":"80","article-title":"Fabrication of a nonvolatile lookup-table circuit chip using magneto\/semiconductor-hybrid structure for an immediate-power-up field programmable gate array","author":"suzuki","year":"2009","journal-title":"Proc Symp VLSI Circuits (VLSIC)"},{"key":"ref18","first-page":"1","article-title":"New nonvolatile FPGA concept using magnetic tunneling junction","author":"bruchon","year":"2006","journal-title":"Proc IEEE Comput Soc Annu Symp Emerging VLSI Technol Arch (ISVLSI)"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1021\/nl071804g"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/FPL.2013.6645511"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2013.2259512"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1145\/503048.503072"},{"key":"ref5","first-page":"57","article-title":"Leakage power analysis of a 90 nm FPGA","author":"tuan","year":"2003","journal-title":"Proc IEEE Custom Integr Circuits Conf"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2015.2426876"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/FPT.2014.7082777"},{"journal-title":"Predictive Technology Model","year":"2017","key":"ref49"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ASSCC.2014.7008878"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1109\/ETC.1989.36234"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1145\/2744769.2755440"},{"key":"ref48","first-page":"1","article-title":"Physical mechanism of HfO2-based bipolar resistive random access memory","author":"chang","year":"2011","journal-title":"Proc Int Symp VLSI Technol Syst Appl"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1063\/1.2976435"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2017.2702741"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2707664"},{"journal-title":"The Design Warrior’s Guide to FPGAs Devices Tools and Flows","year":"2004","author":"maxfield","key":"ref44"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1145\/2934583.2934603"}],"container-title":["IEEE Transactions on Circuits and Systems I: Regular Papers"],"original-title":[],"link":[{"URL":"https:\/\/ieeexplore.ieee.org\/ielaam\/8919\/8691851\/8515252-aam.pdf","content-type":"application\/pdf","content-version":"am","intended-application":"syndication"},{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8919\/8691851\/08515252.pdf?arnumber=8515252","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,13]],"date-time":"2022-07-13T21:13:40Z","timestamp":1657746820000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8515252\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,5]]},"references-count":55,"journal-issue":{"issue":"5"},"URL":"https:\/\/doi.org\/10.1109\/tcsi.2018.2874880","relation":{},"ISSN":["1549-8328","1558-0806"],"issn-type":[{"type":"print","value":"1549-8328"},{"type":"electronic","value":"1558-0806"}],"subject":[],"published":{"date-parts":[[2019,5]]}}}