{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,12]],"date-time":"2026-06-12T16:04:34Z","timestamp":1781280274942,"version":"3.54.1"},"reference-count":26,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"9","license":[{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. I"],"published-print":{"date-parts":[[2019,9]]},"DOI":"10.1109\/tcsi.2019.2925266","type":"journal-article","created":{"date-parts":[[2019,7,16]],"date-time":"2019-07-16T20:27:29Z","timestamp":1563308849000},"page":"3445-3456","source":"Crossref","is-referenced-by-count":31,"title":["Low-Voltage Current and Voltage Reference Design Based on the MOSFET ZTC Effect"],"prefix":"10.1109","volume":"66","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-7521-6461","authenticated-orcid":false,"given":"Yannick","family":"Wenger","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2622-6732","authenticated-orcid":false,"given":"Bernd","family":"Meinerzhagen","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref10","author":"tsividis","year":"2012","journal-title":"The MOS Transistor"},{"key":"ref11","author":"sze","year":"1981","journal-title":"Physics of Semiconductor Devices"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1007\/BF01239381"},{"key":"ref13","first-page":"17","article-title":"A ZTC-based 0.5 V CMOS voltage reference","author":"wenger","year":"2018","journal-title":"Ph D Res Microelec Elec (PRIME)"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2016.2627544"},{"key":"ref15","first-page":"1","article-title":"Untrimmed CMOS nanoampere current reference with curvature-compensation scheme","author":"mohamed","year":"2019","journal-title":"Proc IEEE Int Symp Circuits Syst (ISCAS)"},{"key":"ref16","first-page":"22","article-title":"Selfbiased CMOS current reference based on the ZTC operation condition","author":"toledo","year":"2014","journal-title":"Proc Symp Integr Circuits Syst Design"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/PRIME.2017.7974160"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/MSSC.2014.2313714"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2015.7338488"},{"key":"ref4","first-page":"1","article-title":"A 32 nW bandgap reference voltage operational from 0.5 V supply for ultra-low power systems","author":"shrivastava","year":"2015","journal-title":"Proc IEEE Int Solid-State Circuits Conf"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1016\/S1007-0214(11)70027-X"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2017.8050266"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2016.2562738"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1145\/2800986.2800988"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/81.933328"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2008.4672187"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/WOLTE.2014.6881018"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/4.760378"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1049\/el:20072528"},{"key":"ref22","first-page":"75","article-title":"A resistorless current reference source for 65 nm CMOS technology with low sensitivity to process, supply voltage and temperature variations","author":"?ukaszewicz","year":"2011","journal-title":"Proc IEEE 14th Int Symp Design Diag Electron Circuits Syst"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2007.378790"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1002\/9780470891179"},{"key":"ref23","first-page":"33","article-title":"Process and temperature performance of a CMOS beta-multiplier voltage reference","author":"liu","year":"1998","journal-title":"Proc Midwest Dec Circuits Syst"},{"key":"ref26","first-page":"9","article-title":"Front-end for long-range UHF RFID sensor-tags with a sensitivity of ?30dBm","author":"nowak","year":"2018","journal-title":"Anal Proc"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2012.2206683"}],"container-title":["IEEE Transactions on Circuits and Systems I: Regular Papers"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8919\/8818466\/08764571.pdf?arnumber=8764571","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,13]],"date-time":"2022-07-13T20:52:17Z","timestamp":1657745537000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8764571\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,9]]},"references-count":26,"journal-issue":{"issue":"9"},"URL":"https:\/\/doi.org\/10.1109\/tcsi.2019.2925266","relation":{},"ISSN":["1549-8328","1558-0806"],"issn-type":[{"value":"1549-8328","type":"print"},{"value":"1558-0806","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019,9]]}}}