{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,28]],"date-time":"2026-03-28T17:06:45Z","timestamp":1774717605243,"version":"3.50.1"},"reference-count":29,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"2","license":[{"start":{"date-parts":[[2020,2,1]],"date-time":"2020-02-01T00:00:00Z","timestamp":1580515200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2020,2,1]],"date-time":"2020-02-01T00:00:00Z","timestamp":1580515200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2020,2,1]],"date-time":"2020-02-01T00:00:00Z","timestamp":1580515200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61974118"],"award-info":[{"award-number":["61974118"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Science and Technology on Analog Integrated Circuit Laboratory","award":["6142802180105"],"award-info":[{"award-number":["6142802180105"]}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. I"],"published-print":{"date-parts":[[2020,2]]},"DOI":"10.1109\/tcsi.2019.2946680","type":"journal-article","created":{"date-parts":[[2019,10,30]],"date-time":"2019-10-30T20:06:25Z","timestamp":1572465985000},"page":"611-621","source":"Crossref","is-referenced-by-count":47,"title":["A 48 pW, 0.34 V, 0.019%\/V Line Sensitivity Self-Biased Subthreshold Voltage Reference With DIBL Effect Compensation"],"prefix":"10.1109","volume":"67","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-4630-6975","authenticated-orcid":false,"given":"Yuwei","family":"Wang","sequence":"first","affiliation":[]},{"given":"Quan","family":"Sun","sequence":"additional","affiliation":[]},{"given":"Hongrui","family":"Luo","sequence":"additional","affiliation":[]},{"given":"Xiaofei","family":"Wang","sequence":"additional","affiliation":[]},{"given":"Ruizhi","family":"Zhang","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2746-1846","authenticated-orcid":false,"given":"Hong","family":"Zhang","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2018.2846808"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2010.2092997"},{"key":"ref12","first-page":"97","article-title":"A 1-V 3.1-ppm\/°C 0.8-\n$\\mu\\text{W}$\n bandgap reference with piecewise exponential curvature compensation","author":"luo","year":"2018","journal-title":"Proc IEEE Asian Solid-State Circuits Conf (A-SSCC)"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2018.2834468"},{"key":"ref14","first-page":"1","article-title":"A 29 nW bandgap reference circuit","author":"lee","year":"2015","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref15","first-page":"100","article-title":"A 9.3 nW all-in-one bandgap voltage and current reference circuit","author":"ji","year":"2017","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2018.2836331"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/ESSCIRC.2018.8494332"},{"key":"ref18","author":"narendra","year":"2006","journal-title":"Leakage in Nanometer CMOS Technologies"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/T-ED.1986.22737"},{"key":"ref28","first-page":"308","article-title":"A 192 pW hybrid bandgap-Vth reference with process dependence compensated by a dimension-induced side-effect","author":"ji","year":"2019","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2012.2206683"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2018.2859341"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2014.2340576"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2016.2576643"},{"key":"ref29","author":"tsividis","year":"1987","journal-title":"Operation and Modeling of the MOS Transistor"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2017.2754644"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2018.2794512"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2014.2345298"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2017.2654326"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2014.2350354"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2017.2654441"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/16.55758"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/55.57923"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1090\/surv\/009"},{"key":"ref24","first-page":"1","article-title":"p-n junction leakage current in strained-Si\/SGOI diodes","author":"tanabe","year":"2006","journal-title":"Proc 3rd Int SiGe Technol and Device Meeting"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.1982.1051731"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/ESSCIRC.2017.8094514"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/MSSC.2014.2313714"}],"container-title":["IEEE Transactions on Circuits and Systems I: Regular Papers"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8919\/8972641\/08887274.pdf?arnumber=8887274","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,4,27]],"date-time":"2022-04-27T16:50:24Z","timestamp":1651078224000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8887274\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,2]]},"references-count":29,"journal-issue":{"issue":"2"},"URL":"https:\/\/doi.org\/10.1109\/tcsi.2019.2946680","relation":{},"ISSN":["1549-8328","1558-0806"],"issn-type":[{"value":"1549-8328","type":"print"},{"value":"1558-0806","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,2]]}}}