{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,19]],"date-time":"2026-06-19T16:37:11Z","timestamp":1781887031490,"version":"3.54.5"},"reference-count":40,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"6","license":[{"start":{"date-parts":[[2023,6,1]],"date-time":"2023-06-01T00:00:00Z","timestamp":1685577600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2023,6,1]],"date-time":"2023-06-01T00:00:00Z","timestamp":1685577600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,6,1]],"date-time":"2023-06-01T00:00:00Z","timestamp":1685577600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. I"],"published-print":{"date-parts":[[2023,6]]},"DOI":"10.1109\/tcsi.2023.3261564","type":"journal-article","created":{"date-parts":[[2023,4,4]],"date-time":"2023-04-04T20:44:14Z","timestamp":1680641054000},"page":"2229-2242","source":"Crossref","is-referenced-by-count":11,"title":["Random Telegraph Noise in Analog CMOS Circuits"],"prefix":"10.1109","volume":"70","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-7434-6432","authenticated-orcid":false,"given":"Mauricio Banaszeski","family":"da Silva","sequence":"first","affiliation":[{"name":"Department of Electronics and Computing, Universidade Federal de Santa Maria, Santa Maria, Brazil"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4990-5113","authenticated-orcid":false,"given":"Gilson I.","family":"Wirth","sequence":"additional","affiliation":[{"name":"Electrical Engineering Department, Universidade Federal do Rio Grande do Sul, Porto Alegre, Brazil"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2588-2199","authenticated-orcid":false,"given":"Hans P.","family":"Tuinhout","sequence":"additional","affiliation":[{"name":"NXP Semiconductors, AE Eindhoven, The Netherlands"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Adrie Zegers-van","family":"Duijnhoven","sequence":"additional","affiliation":[{"name":"NXP Semiconductors, AE Eindhoven, The Netherlands"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1861-883X","authenticated-orcid":false,"given":"Andries J.","family":"Scholten","sequence":"additional","affiliation":[{"name":"NXP Semiconductors, AE Eindhoven, The Netherlands"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1080\/00207215808953881"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2016.2623799"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2703671"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/TCS.1986.1085840"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2044014"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2006.881184"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2003.811418"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/4.766813"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2009.2028449"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.1109\/TNS.1969.4325473"},{"key":"ref11","volume":"1","author":"johnson","year":"1994","journal-title":"Continuous Univariate Distributions"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/4.173122"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2593916"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2022.3147386"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1080\/00018738900101122"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1721637"},{"key":"ref17","doi-asserted-by":"crossref","first-page":"2231","DOI":"10.1109\/T-ED.1980.20257","article-title":"mos interface-state density measurements using transient capacitance spectroscopy","volume":"27","author":"wang","year":"1980","journal-title":"IEEE Transactions on Electron Devices"},{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2006.876206"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2011.09.002"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2002.805707"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2009.5424237"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2163146"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/16.47770"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2012.6479073"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2924819"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2713301"},{"key":"ref20","first-page":"18.6.1","article-title":"Low frequency noise variability in high-k\/metal gate stack 28 nm bulk and FD-SOI CMOS transistors","author":"ioannidis","year":"2011","journal-title":"IEDM Tech Dig"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2012.6330573"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2141139"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2006.888672"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1016\/j.physa.2005.11.014"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/ICMTS.2012.6190641"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2018.2878841"},{"key":"ref7","doi-asserted-by":"crossref","first-page":"1725","DOI":"10.1109\/TED.2014.2368191","article-title":"Impacts of random telegraph noise (RTN) on digital circuits","volume":"62","author":"luo","year":"2015","journal-title":"IEEE Trans Electron Devices"},{"key":"ref9","first-page":"35.2.1","article-title":"A physics-based RTN variability model for MOSFETs","author":"da silva","year":"2014","journal-title":"IEDM Tech Dig"},{"key":"ref4","first-page":"693","article-title":"Low frequency fluctuations in scaled down silicon CMOS devices status and trends","author":"ghibaudo","year":"1994","journal-title":"Proc ESSDERC"},{"key":"ref3","article-title":"1\/f noise and germanium surface properties","author":"mcwhorter","year":"1957","journal-title":"Semiconductor Surface Physics"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2411678"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2019.2911614"},{"key":"ref40","author":"razavi","year":"2011","journal-title":"RF Microelectronics"}],"container-title":["IEEE Transactions on Circuits and Systems I: Regular Papers"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8919\/10137339\/10091925.pdf?arnumber=10091925","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,6,12]],"date-time":"2023-06-12T18:32:37Z","timestamp":1686594757000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10091925\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,6]]},"references-count":40,"journal-issue":{"issue":"6"},"URL":"https:\/\/doi.org\/10.1109\/tcsi.2023.3261564","relation":{},"ISSN":["1549-8328","1558-0806"],"issn-type":[{"value":"1549-8328","type":"print"},{"value":"1558-0806","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,6]]}}}