{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,5]],"date-time":"2026-06-05T15:58:25Z","timestamp":1780675105924,"version":"3.54.1"},"reference-count":41,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"1","license":[{"start":{"date-parts":[[2024,1,1]],"date-time":"2024-01-01T00:00:00Z","timestamp":1704067200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2024,1,1]],"date-time":"2024-01-01T00:00:00Z","timestamp":1704067200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,1,1]],"date-time":"2024-01-01T00:00:00Z","timestamp":1704067200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"publisher","id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Korean Government Ministry of Science and Information and Communications Technology","award":["2020M3F3A2A01081918"],"award-info":[{"award-number":["2020M3F3A2A01081918"]}]},{"name":"Integrated Circuit (IC) Design Education Center"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. I"],"published-print":{"date-parts":[[2024,1]]},"DOI":"10.1109\/tcsi.2023.3327294","type":"journal-article","created":{"date-parts":[[2023,11,2]],"date-time":"2023-11-02T18:21:38Z","timestamp":1698949298000},"page":"274-286","source":"Crossref","is-referenced-by-count":5,"title":["Ferroelectric FET Nonvolatile Sense-Amplifier-Based Flip-Flops for Low Voltage Operation"],"prefix":"10.1109","volume":"71","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-5927-9390","authenticated-orcid":false,"given":"Sekeon","family":"Kim","sequence":"first","affiliation":[{"name":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4772-2695","authenticated-orcid":false,"given":"Sehee","family":"Lim","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9028-4603","authenticated-orcid":false,"given":"Dong Han","family":"Ko","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7545-2429","authenticated-orcid":false,"given":"Tae Woo","family":"Oh","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0757-2581","authenticated-orcid":false,"given":"Seong-Ook","family":"Jung","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","volume-title":"Internet of Things (IoT) Connected Devices Installed Base Worldwide From 2015 to 2025 (in Billions)","year":"2017"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2284367"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2011.2172644"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1002\/cta.1859"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2019.2913009"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2014.2334891"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2017.2700788"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1145\/3218603.3218653"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2017.2702741"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2829348"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2019.2927347"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2021.3061721"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2019.2900574"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2020.2987722"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2020.3041175"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2009.2034764"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2017.2777788"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1049\/el:20000409"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/4.845191"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2005.859586"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIT.2019.8776553"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM13553.2020.9371892"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268338"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM13553.2020.9371974"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2021.3111913"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2022.3222383"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.1997.623738"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2018.8510622"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2829122"},{"key":"ref30","doi-asserted-by":"publisher","DOI":"10.23919\/VLSITechnologyandCir57934.2023.10185284"},{"key":"ref31","volume-title":"BSIM-CMG 107.0.0 Multi-Gate MOSFET Compact Model","year":"2013"},{"key":"ref32","first-page":"29.1.1","article-title":"A 10 nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, self-aligned quad patterning, contact over active gate and cobalt local interconnects","volume-title":"IEDM Tech. Dig.","author":"Auth"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2017.2685634"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2017.2702587"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2020.2964903"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2022.3206478"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2015.7223657"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2021.3100290"},{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1109\/IITC-MAM.2015.7325600"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/IITC.2018.8430489"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2009.2033538"}],"container-title":["IEEE Transactions on Circuits and Systems I: Regular Papers"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8919\/10391078\/10305257.pdf?arnumber=10305257","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,12,18]],"date-time":"2024-12-18T19:56:24Z","timestamp":1734551784000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10305257\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,1]]},"references-count":41,"journal-issue":{"issue":"1"},"URL":"https:\/\/doi.org\/10.1109\/tcsi.2023.3327294","relation":{},"ISSN":["1549-8328","1558-0806"],"issn-type":[{"value":"1549-8328","type":"print"},{"value":"1558-0806","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,1]]}}}