{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,5]],"date-time":"2026-05-05T04:19:17Z","timestamp":1777954757618,"version":"3.51.4"},"reference-count":57,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"5","license":[{"start":{"date-parts":[[2026,5,1]],"date-time":"2026-05-01T00:00:00Z","timestamp":1777593600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2026,5,1]],"date-time":"2026-05-01T00:00:00Z","timestamp":1777593600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,5,1]],"date-time":"2026-05-01T00:00:00Z","timestamp":1777593600000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100006469","name":"Fundo para o Desenvolvimento das Ci\u00eancias e da Tecnologia","doi-asserted-by":"publisher","award":["0151\/2022\/A3"],"award-info":[{"award-number":["0151\/2022\/A3"]}],"id":[{"id":"10.13039\/501100006469","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100006469","name":"Fundo para o Desenvolvimento das Ci\u00eancias e da Tecnologia","doi-asserted-by":"publisher","award":["004\/2023\/SKL"],"award-info":[{"award-number":["004\/2023\/SKL"]}],"id":[{"id":"10.13039\/501100006469","id-type":"DOI","asserted-by":"publisher"}]},{"name":"UM Multi-Year Research Grant","award":["MYRG-GRG 2023-00229-IME"],"award-info":[{"award-number":["MYRG-GRG 2023-00229-IME"]}]},{"name":"UM Multi-Year Research Grant","award":["MYRG-GRG2024-00304-IME"],"award-info":[{"award-number":["MYRG-GRG2024-00304-IME"]}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62304004"],"award-info":[{"award-number":["62304004"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. I"],"published-print":{"date-parts":[[2026,5]]},"DOI":"10.1109\/tcsi.2025.3642813","type":"journal-article","created":{"date-parts":[[2025,12,17]],"date-time":"2025-12-17T18:50:28Z","timestamp":1765997428000},"page":"3102-3115","source":"Crossref","is-referenced-by-count":0,"title":["A Cryogenic HBT-CMOS Temperature Sensor Operating From 4 to 70 K"],"prefix":"10.1109","volume":"73","author":[{"ORCID":"https:\/\/orcid.org\/0009-0007-4904-6797","authenticated-orcid":false,"given":"Chen","family":"Deng","sequence":"first","affiliation":[{"name":"State Key Laboratory of Analog and Mixed-Signal VLSI, Institute of Microelectronics, and FST-DECE, University of Macau, Macau, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-4161-7210","authenticated-orcid":false,"given":"Wenhua","family":"Gong","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Analog and Mixed-Signal VLSI, Institute of Microelectronics, and FST-DECE, University of Macau, Macau, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6978-0282","authenticated-orcid":false,"given":"Yatao","family":"Peng","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Analog and Mixed-Signal VLSI, Institute of Microelectronics, and FST-DECE, University of Macau, Macau, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4195-4551","authenticated-orcid":false,"given":"Jun","family":"Yin","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Analog and Mixed-Signal VLSI, Institute of Microelectronics, and FST-DECE, University of Macau, Macau, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-1064-1906","authenticated-orcid":false,"given":"Jing","family":"Wang","sequence":"additional","affiliation":[{"name":"School of Microelectronics, University of Science and Technology of China, Hefei, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0009-0002-3569-5140","authenticated-orcid":false,"given":"Jad","family":"Benserhir","sequence":"additional","affiliation":[{"name":"Advanced Quantum Architecture Laboratory, &#x00C9;cole Polytechnique F&#x00E9;d&#x00E9;rale de Lausanne (EPFL), Neuch&#x00E2;tel, Switzerland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3285-0187","authenticated-orcid":false,"given":"Lin","family":"Cheng","sequence":"additional","affiliation":[{"name":"School of Microelectronics, University of Science and Technology of China, Hefei, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-0620-3365","authenticated-orcid":false,"given":"Edoardo","family":"Charbon","sequence":"additional","affiliation":[{"name":"Advanced Quantum Architecture Laboratory, &#x00C9;cole Polytechnique F&#x00E9;d&#x00E9;rale de Lausanne (EPFL), Neuch&#x00E2;tel, Switzerland"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2821-648X","authenticated-orcid":false,"given":"Rui P.","family":"Martins","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Analog and Mixed-Signal VLSI, Institute of Microelectronics, and FST-DECE, University of Macau, Macau, China"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3579-8740","authenticated-orcid":false,"given":"Pui-In","family":"Mak","sequence":"additional","affiliation":[{"name":"State Key Laboratory of Analog and Mixed-Signal VLSI, Institute of Microelectronics, and FST-DECE, University of Macau, Macau, China"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/MMM.2020.3023271"},{"key":"ref2","volume-title":"Cryogenic Temperature Sensors-Silicon Diodes","year":"2025"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-021-00687-6"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2009.2037381"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2821763"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2022.3174605"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2919924"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2021.3116975"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/isscc19947.2020.9063007"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2022.3208770"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2023.3308554"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2024.3523482"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2024.3402131"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2024.3440071"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/ICSENS.2016.7808759"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2023.3276196"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2020.3042825"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2020.3013110"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1063\/1.4979611"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2020.3024678"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/isscc49657.2024.10454392"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2021.108149"},{"key":"ref23","volume-title":"Sensor Characteristics","year":"2025"},{"key":"ref24","volume-title":"Sensor","year":"2025"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2008.2003097"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2002.1006408"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.1989.38745"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2022.3199997"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/ESSCIRC.2011.6044961"},{"key":"ref30","first-page":"222","article-title":"12.7 A 0.85V 600 nW all-CMOS temperature sensor with an inaccuracy of \u00b10.4\u00b0C ($3\\sigma $\n) from -40 to 125\u00b0C","author":"Souri","year":"2014","journal-title":"IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1109\/jssc.2025.3603916"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2024.3378768"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.1109\/LSSC.2018.2875821"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-030-95284-6"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1109\/TIM.2024.3381286"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1109\/16.199358"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2798281"},{"key":"ref38","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2024.3507783"},{"key":"ref39","volume-title":"Semiconductor Physics and Devices: Basic Principles","author":"Neamen","year":"2012"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC61187.2024.10600034"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1007\/1-4020-5258-8"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2011.2144290"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2012.2214831"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2016.2638464"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2278737"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2023.3266027"},{"key":"ref47","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-319-62307-8"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2020.2988730"},{"key":"ref49","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM45625.2022.10019388"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1109\/5.542410"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2022.3186979"},{"key":"ref52","doi-asserted-by":"publisher","DOI":"10.1109\/JXCDC.2021.3131144"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2024.3394167"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1109\/JXCDC.2021.3131100"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1109\/ICEIC61013.2024.10457101"},{"key":"ref56","volume-title":"Model RO-215 (100K\u03a9)","year":"2025"},{"key":"ref57","volume-title":"Interchangeable Rox","year":"2025"}],"container-title":["IEEE Transactions on Circuits and Systems I: Regular Papers"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/8919\/11500576\/11302870.pdf?arnumber=11302870","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,5,4]],"date-time":"2026-05-04T19:39:07Z","timestamp":1777923547000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/11302870\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,5]]},"references-count":57,"journal-issue":{"issue":"5"},"URL":"https:\/\/doi.org\/10.1109\/tcsi.2025.3642813","relation":{},"ISSN":["1549-8328","1558-0806"],"issn-type":[{"value":"1549-8328","type":"print"},{"value":"1558-0806","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,5]]}}}