{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,2]],"date-time":"2026-04-02T09:10:48Z","timestamp":1775121048479,"version":"3.50.1"},"reference-count":13,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"5","license":[{"start":{"date-parts":[[2015,5,1]],"date-time":"2015-05-01T00:00:00Z","timestamp":1430438400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"}],"funder":[{"DOI":"10.13039\/501100005049","name":"Science and Engineering Research Council of the Agency for Science, Technology and Research","doi-asserted-by":"publisher","award":["1021650086"],"award-info":[{"award-number":["1021650086"]}],"id":[{"id":"10.13039\/501100005049","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. II"],"published-print":{"date-parts":[[2015,5]]},"DOI":"10.1109\/tcsii.2014.2386231","type":"journal-article","created":{"date-parts":[[2014,12,24]],"date-time":"2014-12-24T14:43:55Z","timestamp":1419432235000},"page":"436-440","source":"Crossref","is-referenced-by-count":17,"title":["A Time-Domain Band-Gap Temperature Sensor in SOI CMOS for High-Temperature Applications"],"prefix":"10.1109","volume":"62","author":[{"given":"Jerrin","family":"Pathrose","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chengye","family":"Liu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kevin T.C.","family":"Chai","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yong","family":"Ping Xu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"key":"ref10","first-page":"110","article-title":"High temperature bandgap reference in PDSOI CMOS with operating temperature up to 300&#x00B0;C","author":"pathrose","year":"0","journal-title":"Proc IEEE Int Symp RFIT"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2012.6176979"},{"key":"ref12","first-page":"586","article-title":"A switching scheme for switched-capacitor filters which reduces effect of parasitic capacitances associated with control terminals","volume":"2","author":"haigh","year":"0","journal-title":"Proc IEEE Int Symp Circuits Syst"},{"key":"ref13","doi-asserted-by":"crossref","first-page":"2241","DOI":"10.1109\/TCSI.2013.2246254","article-title":"A 0.008 mm2 500 $\\mu$W 469 kS\/s frequency-to-digital converter based CMOS temperature sensor with process variation compensation","volume":"60","author":"sewook","year":"2013","journal-title":"Circuits and Systems I Regular Papers IEEE Trans"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2010.2040658"},{"key":"ref3","first-page":"222","article-title":"A 80kS\/s 36 $\\mu$W resistor-based temperature sensor using BGR-free SAR ADC with a unevenly-weighted resistor string in 0.18 $\\mu$m CMOS","author":"wu","year":"0","journal-title":"Proc VLSI Symp"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/SOI.2007.4357877"},{"key":"ref5","doi-asserted-by":"crossref","first-page":"66","DOI":"10.1016\/j.sna.2012.02.024","article-title":"An SOI thermal-diffusivity-based temperature sensor with &#x00B1;0.6&#x00B0;C (3 $\\sigma$) untrimmed inaccuracy from ?70&#x00B0;C to 225&#x00B0;C","volume":"188","author":"van vroonhoven","year":"0","journal-title":"Sens Actuators A Phys"},{"key":"ref8","first-page":"173","article-title":"A time-domain smart temperature sensor without an explicit bandgap reference in SOI CMOS operating up to 225&#x00B0;C","author":"pathrose","year":"0","journal-title":"Proc IEEE A-SSCC"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2014.2327316"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2012.2214831"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2011.2144290"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2006.1693217"}],"container-title":["IEEE Transactions on Circuits and Systems II: Express Briefs"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8920\/7094329\/06998086.pdf?arnumber=6998086","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,1,12]],"date-time":"2022-01-12T11:41:07Z","timestamp":1641987667000},"score":1,"resource":{"primary":{"URL":"http:\/\/ieeexplore.ieee.org\/document\/6998086\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,5]]},"references-count":13,"journal-issue":{"issue":"5"},"URL":"https:\/\/doi.org\/10.1109\/tcsii.2014.2386231","relation":{},"ISSN":["1549-7747","1558-3791"],"issn-type":[{"value":"1549-7747","type":"print"},{"value":"1558-3791","type":"electronic"}],"subject":[],"published":{"date-parts":[[2015,5]]}}}