{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,16]],"date-time":"2026-06-16T14:55:08Z","timestamp":1781621708306,"version":"3.54.5"},"reference-count":28,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"9","license":[{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,9,1]],"date-time":"2019-09-01T00:00:00Z","timestamp":1567296000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100000185","name":"Defense Advanced Research Projects Agency","doi-asserted-by":"publisher","id":[{"id":"10.13039\/100000185","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. II"],"published-print":{"date-parts":[[2019,9]]},"DOI":"10.1109\/tcsii.2018.2889225","type":"journal-article","created":{"date-parts":[[2018,12,21]],"date-time":"2018-12-21T20:20:45Z","timestamp":1545423645000},"page":"1577-1581","source":"Crossref","is-referenced-by-count":111,"title":["An Ultra-Dense 2FeFET TCAM Design Based on a Multi-Domain FeFET Model"],"prefix":"10.1109","volume":"66","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-4656-9545","authenticated-orcid":false,"given":"Xunzhao","family":"Yin","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3628-3431","authenticated-orcid":false,"given":"Kai","family":"Ni","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-8571-1308","authenticated-orcid":false,"given":"Dayane","family":"Reis","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6044-5173","authenticated-orcid":false,"given":"Suman","family":"Datta","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-7776-4306","authenticated-orcid":false,"given":"Michael","family":"Niemier","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-6636-9738","authenticated-orcid":false,"given":"Xiaobo Sharon","family":"Hu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.23919\/DATE.2017.7927219"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2829122"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2018.8510622"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2558149"},{"key":"ref14","article-title":"Negative capacitance for ultra-low power computing","author":"khan","year":"2015"},{"key":"ref15","first-page":"19.7.1","article-title":"A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond","author":"d\u00fcnkel","year":"2017","journal-title":"Proc IEEE Int Electron Devices Meeting"},{"key":"ref16","first-page":"5","article-title":"Landau–Khalatnikov simulations for ferroelectric switching in ferroelectric random access memory application","volume":"46","author":"song","year":"2005","journal-title":"J Korean Phys Soc"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2018.2871119"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.1997.623738"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2017.8268471"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.7873\/DATE.2015.0733"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2009.2020935"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1145\/2966986.2967059"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2017.28"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2018.2849925"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2009.2037995"},{"key":"ref8","first-page":"1","article-title":"A 3T1R nonvolatile TCAM using MLC ReRAM with sub-1ns search time","author":"chang","year":"2015","journal-title":"Proc IEEE Int Solid-State Circuits Conf (ISSCC)"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1145\/2966986.2967060"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-642-96384-1"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2013.2292055"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2015.2434888"},{"key":"ref20","first-page":"1289","article-title":"Computing with ferroelectric FETs: Devices, models, systems, and applications","author":"aziz","year":"2018","journal-title":"Proc IEEE Des Autom Test Europe Conf Exhib (DATE)"},{"key":"ref22","doi-asserted-by":"crossref","first-page":"1009","DOI":"10.1109\/JSSC.2016.2515510","article-title":"A 28 nm configurable memory (TCAM\/BCAM\/SRAM) using push-rule 6T bit cell enabling logic-in-memory","volume":"51","author":"jeloka","year":"2016","journal-title":"IEEE J Solid-State Circuits"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2283465"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1145\/1146909.1147172"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/MSSC.2014.2375071"},{"key":"ref26","first-page":"1","article-title":"Architecting energy efficient crossbar-based memristive random-access memories","author":"lastras-monta\u00f1o","year":"2015","journal-title":"Proc IEEE Int Symp Nanoscale Archit"},{"key":"ref25","first-page":"240","article-title":"13.6 A 28nm 400MHz 4-parallel 1.6Gsearch\/s 80Mb ternary CAM","author":"nii","year":"2014","journal-title":"IEEE Int Solid-State Circuits Conf Dig Tech Papers (ISSCC)"}],"container-title":["IEEE Transactions on Circuits and Systems II: Express Briefs"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8920\/8815903\/08585162.pdf?arnumber=8585162","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,13]],"date-time":"2022-07-13T21:00:08Z","timestamp":1657746008000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8585162\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,9]]},"references-count":28,"journal-issue":{"issue":"9"},"URL":"https:\/\/doi.org\/10.1109\/tcsii.2018.2889225","relation":{},"ISSN":["1549-7747","1558-3791"],"issn-type":[{"value":"1549-7747","type":"print"},{"value":"1558-3791","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019,9]]}}}