{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,26]],"date-time":"2026-06-26T17:45:23Z","timestamp":1782495923959,"version":"3.54.5"},"reference-count":19,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"7","funder":[{"name":"National Key R&D Program of China","award":["2018YFB2202803"],"award-info":[{"award-number":["2018YFB2202803"]}]},{"DOI":"10.13039\/501100001809","name":"State Key Program of the National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61934005"],"award-info":[{"award-number":["61934005"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["62074001"],"award-info":[{"award-number":["62074001"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100003995","name":"Natural Science Foundation of Anhui Province","doi-asserted-by":"publisher","award":["2008085QF322"],"award-info":[{"award-number":["2008085QF322"]}],"id":[{"id":"10.13039\/501100003995","id-type":"DOI","asserted-by":"publisher"}]},{"name":"Natural Science Foundation of the Higher Education Institutions of Anhui Province","award":["KJ2019A0031"],"award-info":[{"award-number":["KJ2019A0031"]}]},{"DOI":"10.13039\/501100002729","name":"Doctoral Research Funding Project of Anhui University","doi-asserted-by":"publisher","award":["Y040418177"],"award-info":[{"award-number":["Y040418177"]}],"id":[{"id":"10.13039\/501100002729","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. II"],"published-print":{"date-parts":[[2021,7]]},"DOI":"10.1109\/tcsii.2021.3057678","type":"journal-article","created":{"date-parts":[[2021,2,9]],"date-time":"2021-02-09T05:42:20Z","timestamp":1612849340000},"page":"2628-2632","source":"Crossref","is-referenced-by-count":8,"title":["Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise Margin and Low Power Consumption"],"prefix":"10.1109","volume":"68","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-3314-1606","authenticated-orcid":false,"given":"Zhiting","family":"Lin","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6176-8847","authenticated-orcid":false,"given":"Luanyun","family":"Li","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5012-2570","authenticated-orcid":false,"given":"Xiulong","family":"Wu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2408-5048","authenticated-orcid":false,"given":"Chunyu","family":"Peng","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Wenjuan","family":"Lu","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Qiang","family":"Zhao","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2014.2342371"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/NANOARCH.2011.5941482"},{"key":"ref12","first-page":"1","article-title":"Robust TFET SRAM cell for ultra-low power IoT application","author":"ahmad","year":"2017","journal-title":"IEEE Int Conf Electron Devices and Solid-State Circuits (EDSSC)"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2015.2392793"},{"key":"ref14","first-page":"740","article-title":"Robust 6T Si tunneling transistor SRAM design","author":"yang","year":"2011","journal-title":"Proc Design Autom Test Eur (DATE)"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2825639"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1088\/2631-8695\/ab5f16"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2012.2213103"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS.2018.8351297"},{"key":"ref19","author":"lu","year":"2015","journal-title":"Universal TFET Model"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2015.7223688"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2007.901273"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/JETCAS.2014.2361054"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2109002"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2015.2412118"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1016\/j.sse.2016.10.022"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2012.6242454"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2675364"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2689746"}],"container-title":["IEEE Transactions on Circuits and Systems II: Express Briefs"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8920\/9467112\/09349759.pdf?arnumber=9349759","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,11,1]],"date-time":"2021-11-01T20:08:53Z","timestamp":1635797333000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9349759\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,7]]},"references-count":19,"journal-issue":{"issue":"7"},"URL":"https:\/\/doi.org\/10.1109\/tcsii.2021.3057678","relation":{},"ISSN":["1549-7747","1558-3791"],"issn-type":[{"value":"1549-7747","type":"print"},{"value":"1558-3791","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,7]]}}}