{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,6,19]],"date-time":"2026-06-19T15:53:17Z","timestamp":1781884397672,"version":"3.54.5"},"reference-count":73,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"7","funder":[{"DOI":"10.13039\/501100012166","name":"National Key Research and Development Program of China","doi-asserted-by":"publisher","award":["2018YFB2202800"],"award-info":[{"award-number":["2018YFB2202800"]}],"id":[{"id":"10.13039\/501100012166","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001809","name":"National Natural Science Foundation of China","doi-asserted-by":"publisher","award":["61904028"],"award-info":[{"award-number":["61904028"]}],"id":[{"id":"10.13039\/501100001809","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. II"],"published-print":{"date-parts":[[2021,7]]},"DOI":"10.1109\/tcsii.2021.3059031","type":"journal-article","created":{"date-parts":[[2021,2,13]],"date-time":"2021-02-13T02:46:23Z","timestamp":1613184383000},"page":"2633-2639","source":"Crossref","is-referenced-by-count":13,"title":["Toward Energy-Efficient STT-MRAM Design With Multi-Modes Reconfiguration"],"prefix":"10.1109","volume":"68","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-9251-0574","authenticated-orcid":false,"given":"Hao","family":"Cai","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Juntong","family":"Chen","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7327-6759","authenticated-orcid":false,"given":"Yongliang","family":"Zhou","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8088-0404","authenticated-orcid":false,"given":"Weisheng","family":"Zhao","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref73","doi-asserted-by":"publisher","DOI":"10.23919\/DATE.2019.8715066"},{"key":"ref72","doi-asserted-by":"publisher","DOI":"10.1145\/2744769.2744799"},{"key":"ref71","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2019.2960028"},{"key":"ref70","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2020.2980331"},{"key":"ref39","doi-asserted-by":"publisher","DOI":"10.1016\/0375-9601(75)90174-7"},{"key":"ref38","doi-asserted-by":"crossref","first-page":"671","DOI":"10.1038\/s41467-018-03140-z","article-title":"Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance","volume":"9","author":"mengxing","year":"2018","journal-title":"Nat Commun"},{"key":"ref33","doi-asserted-by":"publisher","DOI":"10.3850\/9783981537079_0909"},{"key":"ref32","doi-asserted-by":"publisher","DOI":"10.1109\/HPCA.2012.6169027"},{"key":"ref31","doi-asserted-by":"publisher","DOI":"10.1145\/3195970.3196116"},{"key":"ref30","first-page":"200","article-title":"A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability","author":"sheu","year":"2011","journal-title":"Proc IEEE Int Solid-State Circuits Conf (ISSCC)"},{"key":"ref37","doi-asserted-by":"publisher","DOI":"10.1038\/nmat1257"},{"key":"ref36","doi-asserted-by":"publisher","DOI":"10.1063\/1.1459605"},{"key":"ref35","doi-asserted-by":"publisher","DOI":"10.1063\/1.2198797"},{"key":"ref34","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-018-0054-8"},{"key":"ref60","doi-asserted-by":"publisher","DOI":"10.1109\/INTMAG.2018.8508764"},{"key":"ref62","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2018.8510627"},{"key":"ref61","doi-asserted-by":"publisher","DOI":"10.1145\/3316781.3317764"},{"key":"ref63","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC19947.2020.9063072"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1109\/ACCESS.2020.3024598"},{"key":"ref64","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2018.8614560"},{"key":"ref27","first-page":"1","article-title":"A magnetic tunnel junction based true random number generator with conditional perturb and real-time output probability tracking","author":"choi","year":"2014","journal-title":"Proc IEEE Int Electron Devices Meeting"},{"key":"ref65","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2019.2912941"},{"key":"ref66","doi-asserted-by":"publisher","DOI":"10.1109\/TNANO.2019.2914009"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1109\/4.962291"},{"key":"ref67","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2019.2926984"},{"key":"ref68","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2019.2898391"},{"key":"ref69","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2016.2621344"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2015.29"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/MSSC.2016.2546199"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/ASP-DAC47756.2020.9045166"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-018-0160-7"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/JXCDC.2019.2956468"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2015.7409770"},{"key":"ref23","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2018.2795039"},{"key":"ref26","doi-asserted-by":"publisher","DOI":"10.1109\/ISVLSI.2015.37"},{"key":"ref25","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIT.2018.8510623"},{"key":"ref50","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2016.7838491"},{"key":"ref51","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2018.8502260"},{"key":"ref59","doi-asserted-by":"publisher","DOI":"10.1109\/ISVLSI.2018.00058"},{"key":"ref58","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2017.2776954"},{"key":"ref57","doi-asserted-by":"publisher","DOI":"10.1145\/3195970.3196009"},{"key":"ref56","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2016.2582203"},{"key":"ref55","doi-asserted-by":"publisher","DOI":"10.1109\/JETCAS.2016.2547681"},{"key":"ref54","doi-asserted-by":"publisher","DOI":"10.1109\/TVLSI.2015.2439733"},{"key":"ref53","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2018.8310394"},{"key":"ref52","first-page":"296","article-title":"A 45nm 1Mb embedded STT-MRAM with design techniques to minimize read-disturbance","author":"kim","year":"2011","journal-title":"IEEE Symp VLSI Circuits Dig Tech Papers"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1038\/s41928-018-0117-x"},{"key":"ref11","first-page":"240","article-title":"15.2 A 28nm 64Kb inference-training two-way transpose multibit 6t sram compute-in-memory macro for AI edge chips","author":"su","year":"2020","journal-title":"Proc IEEE Int Solid-State Circuits Conf (ISSCC)"},{"key":"ref40","doi-asserted-by":"publisher","DOI":"10.1016\/j.microrel.2014.07.019"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC19947.2020.9062985"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC19947.2020.9062953"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC19947.2020.9063078"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.2016.2574939"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/ISVLSI.2018.00103"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.23919\/VLSIT.2019.8776569"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/JETCAS.2019.2932285"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1145\/3316781.3317872"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM19573.2019.8993551"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/MSSC.2019.2922889"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TMAG.2015.2495253"},{"key":"ref5","first-page":"1","article-title":"7.5 A 3.3ns-access-time $71.2\\mu\\text{W}$\n\/MHz 1Mb embedded STT-MRAM using physically eliminated read-disturb scheme and normally-off memory architecture","author":"noguchi","year":"2015","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2018.8310393"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2014.6858403"},{"key":"ref49","first-page":"216","article-title":"Time-differential sense amplifier for sub-80mV bitline voltage embedded STT-MRAM in 40nm CMOS","author":"jefremow","year":"2013","journal-title":"IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers"},{"key":"ref9","first-page":"108c","article-title":"A 250-MHz 256b-I\/O 1-Mb STT-MRAM with advanced perpendicular MTJ based dual cell for nonvolatile magnetic caches to reduce active power of processors","author":"noguchi","year":"2013","journal-title":"Proc IEEE Symp VLSI Technol"},{"key":"ref46","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2015.7062962"},{"key":"ref45","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2019.8662444"},{"key":"ref48","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC19947.2020.9062955"},{"key":"ref47","first-page":"258","article-title":"A 64Mb MRAM with clamped-reference and adequate-reference schemes","author":"tsuchida","year":"2010","journal-title":"Proc IEEE Int Solid-State Circuits Conf (ISSCC)"},{"key":"ref42","doi-asserted-by":"publisher","DOI":"10.1016\/0304-8853(96)00062-5"},{"key":"ref41","doi-asserted-by":"publisher","DOI":"10.1038\/nmat2804"},{"key":"ref44","doi-asserted-by":"publisher","DOI":"10.1109\/JETCAS.2016.2547704"},{"key":"ref43","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.54.9353"}],"container-title":["IEEE Transactions on Circuits and Systems II: Express Briefs"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8920\/9467112\/09353722.pdf?arnumber=9353722","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,10,26]],"date-time":"2021-10-26T20:27:13Z","timestamp":1635280033000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9353722\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,7]]},"references-count":73,"journal-issue":{"issue":"7"},"URL":"https:\/\/doi.org\/10.1109\/tcsii.2021.3059031","relation":{},"ISSN":["1549-7747","1558-3791"],"issn-type":[{"value":"1549-7747","type":"print"},{"value":"1558-3791","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,7]]}}}