{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,7]],"date-time":"2025-11-07T09:43:03Z","timestamp":1762508583498,"version":"3.37.3"},"reference-count":30,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"3","license":[{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2022,3,1]],"date-time":"2022-03-01T00:00:00Z","timestamp":1646092800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. II"],"published-print":{"date-parts":[[2022,3]]},"DOI":"10.1109\/tcsii.2021.3102118","type":"journal-article","created":{"date-parts":[[2021,8,3]],"date-time":"2021-08-03T20:03:05Z","timestamp":1628020985000},"page":"729-733","source":"Crossref","is-referenced-by-count":20,"title":["A New Grounded Capacitance Multiplier Using a Single ICFOA and a Grounded Capacitor"],"prefix":"10.1109","volume":"69","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-8835-0907","authenticated-orcid":false,"given":"Tolga","family":"Yucehan","sequence":"first","affiliation":[{"name":"Dazkiri Vocational School, Afyon Kocatepe University, Afyonkarahisar, Turkey"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5100-1738","authenticated-orcid":false,"given":"Erkan","family":"Yuce","sequence":"additional","affiliation":[{"name":"Electrical and Electronics Engineering Department, Pamukkale University, Denizli, Turkey"}]}],"member":"263","reference":[{"key":"ref1","first-page":"371","article-title":"Active capacitance multiplication for sensor application","volume-title":"Proc. Italian Conf. Sens. Microsyst.","author":"Amico"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1049\/el:19860248"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1049\/el:19950018"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2015.2435751"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1587\/elex.15.20171191"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1016\/j.aeue.2017.06.006"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TCT.1970.1083067"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2692(97)00125-0"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2692(99)00025-7"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1016\/j.aeue.2014.04.013"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/APCCAS.2008.4746314"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1080\/03772063.2020.1739573"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2020.3005524"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2007.913689"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1078\/1434-8411-54100121"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/SIU.2015.7130102"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1016\/j.aeue.2019.153034"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2018.2874511"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1016\/j.aeue.2019.05.010"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1016\/j.aeue.2020.153444"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1049\/el:19920162"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1016\/S0026-2692(98)00086-X"},{"key":"ref23","first-page":"115","volume-title":"CMOS Circuit Design, Layout and Simulation","author":"Baker","year":"2019"},{"key":"ref24","doi-asserted-by":"publisher","DOI":"10.1109\/81.486430"},{"volume-title":"AD844 Datasheet (Rev. G)","year":"2017","key":"ref25"},{"volume-title":"MOSIS Parametric Test Results","year":"2021","key":"ref26"},{"key":"ref27","doi-asserted-by":"publisher","DOI":"10.1007\/s00034-015-0004-x"},{"key":"ref28","doi-asserted-by":"publisher","DOI":"10.1049\/el:19940302"},{"key":"ref29","doi-asserted-by":"publisher","DOI":"10.1016\/j.aeue.2004.10.001"},{"key":"ref30","first-page":"276","article-title":"MOS field-effect transistors (MOSFETs)","volume-title":"Microelectronic Circuits","author":"Sedra","year":"2020"}],"container-title":["IEEE Transactions on Circuits and Systems II: Express Briefs"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8920\/9736462\/09504597.pdf?arnumber=9504597","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,1,11]],"date-time":"2024-01-11T22:38:31Z","timestamp":1705012711000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/9504597\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,3]]},"references-count":30,"journal-issue":{"issue":"3"},"URL":"https:\/\/doi.org\/10.1109\/tcsii.2021.3102118","relation":{},"ISSN":["1549-7747","1558-3791"],"issn-type":[{"type":"print","value":"1549-7747"},{"type":"electronic","value":"1558-3791"}],"subject":[],"published":{"date-parts":[[2022,3]]}}}