{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T19:58:19Z","timestamp":1740167899907,"version":"3.37.3"},"reference-count":22,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"3","license":[{"start":{"date-parts":[[2024,3,1]],"date-time":"2024-03-01T00:00:00Z","timestamp":1709251200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2024,3,1]],"date-time":"2024-03-01T00:00:00Z","timestamp":1709251200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,3,1]],"date-time":"2024-03-01T00:00:00Z","timestamp":1709251200000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. II"],"published-print":{"date-parts":[[2024,3]]},"DOI":"10.1109\/tcsii.2023.3342072","type":"journal-article","created":{"date-parts":[[2023,12,12]],"date-time":"2023-12-12T19:06:39Z","timestamp":1702407999000},"page":"1571-1575","source":"Crossref","is-referenced-by-count":0,"title":["Arbitrary Shaped High-Voltage RF Switch"],"prefix":"10.1109","volume":"71","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-8270-5877","authenticated-orcid":false,"given":"Oguzhan","family":"Oezdamar","sequence":"first","affiliation":[{"name":"RF and Sensors Department, Infineon Technologies AG, Neubiberg, Germany"}]},{"given":"Semen","family":"Syroiezhin","sequence":"additional","affiliation":[{"name":"RF and Sensors Department, Infineon Technologies AG, Neubiberg, Germany"}]},{"ORCID":"https:\/\/orcid.org\/0009-0003-9321-5421","authenticated-orcid":false,"given":"Andrea","family":"Cattaneo","sequence":"additional","affiliation":[{"name":"RF and Sensors Department, Infineon Technologies AG, Neubiberg, Germany"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7689-8529","authenticated-orcid":false,"given":"Valentyn","family":"Solomko","sequence":"additional","affiliation":[{"name":"RF and Sensors Department, Infineon Technologies AG, Neubiberg, Germany"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1002\/9781118818046"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JSAC.2014.2328098"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/COMCAS44984.2019.8958276"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2789941"},{"key":"ref5","first-page":"1","article-title":"Behavior of RF MEMS switches under ESD stress","volume-title":"Proc. Elect. Overstress\/Electrostat. Discharge Sympos.","author":"Sangameswaran"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/MWSYM.2013.6697501"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2021.3100327"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/COMCAS44984.2019.8958028"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC53440.2021.9631806"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/RFIC.2013.6569611"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/APMC.2015.7413448"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2014.2308306"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2020.2996195"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.1977.1129179"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.1987.1133671"},{"key":"ref16","first-page":"750","article-title":"Analytical model of voltage division inside stacked-FET switch","volume-title":"Proc. Asia-Pac. Microw. Conf.","author":"Zhu"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/ISCAS51556.2021.9401633"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/COMCAS52219.2021.9629061"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/APMC47863.2020.9331544"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/LSSC.2021.3059918"},{"key":"ref21","first-page":"117","article-title":"RF SPST switch based on innovative heterogeneous GaN\/SOI integration technique","volume-title":"Proc. 15th Eur. Microw. Integr. Circuits Conf. (EuMIC)","author":"Drillet"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TMTT.2018.2876825"}],"container-title":["IEEE Transactions on Circuits and Systems II: Express Briefs"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8920\/10460332\/10354456.pdf?arnumber=10354456","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,12,30]],"date-time":"2024-12-30T19:49:11Z","timestamp":1735588151000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10354456\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,3]]},"references-count":22,"journal-issue":{"issue":"3"},"URL":"https:\/\/doi.org\/10.1109\/tcsii.2023.3342072","relation":{},"ISSN":["1549-7747","1558-3791"],"issn-type":[{"type":"print","value":"1549-7747"},{"type":"electronic","value":"1558-3791"}],"subject":[],"published":{"date-parts":[[2024,3]]}}}