{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T19:58:49Z","timestamp":1740167929440,"version":"3.37.3"},"reference-count":22,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"10","license":[{"start":{"date-parts":[[2024,10,1]],"date-time":"2024-10-01T00:00:00Z","timestamp":1727740800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2024,10,1]],"date-time":"2024-10-01T00:00:00Z","timestamp":1727740800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2024,10,1]],"date-time":"2024-10-01T00:00:00Z","timestamp":1727740800000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/100004358","name":"Samsung Electronics Company Ltd.","doi-asserted-by":"publisher","award":["IO201211-08089-01"],"award-info":[{"award-number":["IO201211-08089-01"]}],"id":[{"id":"10.13039\/100004358","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. II"],"published-print":{"date-parts":[[2024,10]]},"DOI":"10.1109\/tcsii.2024.3407592","type":"journal-article","created":{"date-parts":[[2024,5,30]],"date-time":"2024-05-30T18:06:26Z","timestamp":1717092386000},"page":"4531-4535","source":"Crossref","is-referenced-by-count":1,"title":["A Contention-Free Wordline Supporting Circuit for High Wordline Resistance in Sub-10-nm SRAM Designs"],"prefix":"10.1109","volume":"71","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-8991-0080","authenticated-orcid":false,"given":"Tae-Hyun","family":"Kim","sequence":"first","affiliation":[{"name":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Juhyun","family":"Park","sequence":"additional","affiliation":[{"name":"Volume Product Design Group, DRAM Design Division, SK Hynix Inc., Icheon, South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-3228-3725","authenticated-orcid":false,"given":"In-Jun","family":"Jung","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0720-6821","authenticated-orcid":false,"given":"Hoonki","family":"Kim","sequence":"additional","affiliation":[{"name":"Foundry Division, Samsung Electronics, Suwon, Gyeonggi, South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-2752-3138","authenticated-orcid":false,"given":"Taejoong","family":"Song","sequence":"additional","affiliation":[{"name":"Foundry Division, Samsung Electronics, Suwon, Gyeonggi, South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0757-2581","authenticated-orcid":false,"given":"Seong-Ook","family":"Jung","sequence":"additional","affiliation":[{"name":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"doi-asserted-by":"publisher","key":"ref1","DOI":"10.1109\/ACCESS.2020.3030099"},{"volume-title":"IRDS 2017: International Roadmap for Devices and Systems","key":"ref2"},{"doi-asserted-by":"publisher","key":"ref3","DOI":"10.1109\/LED.2015.2394366"},{"volume-title":"The Design and Analysis of VLSI Circuits","year":"1985","author":"Glasser","key":"ref4"},{"doi-asserted-by":"publisher","key":"ref5","DOI":"10.1109\/TVLSI.2008.2000250"},{"doi-asserted-by":"publisher","key":"ref6","DOI":"10.1109\/ISCAS.2018.8351117"},{"doi-asserted-by":"publisher","key":"ref7","DOI":"10.1109\/vlsicircuits18222.2020.9162985"},{"doi-asserted-by":"publisher","key":"ref8","DOI":"10.1109\/JSSC.2014.2362842"},{"key":"ref9","first-page":"198","article-title":"A 7 nm FinFET SRAM using EUV lithography with dual write-driver-assist circuitry for low-voltage applications","volume-title":"Proc. IEEE ISSCC","author":"Song"},{"key":"ref10","first-page":"206","article-title":"12.1 A 7 nm 256 Mb SRAM in high-k metalgate FinFET technology with write-assist circuitry for low-VMIN applications","volume-title":"Proc. IEEE ISSCC","author":"Chang"},{"doi-asserted-by":"publisher","key":"ref11","DOI":"10.4304\/jcp.3.5.34-40"},{"doi-asserted-by":"publisher","key":"ref12","DOI":"10.1109\/vlsicircuits18222.2020.9162822"},{"doi-asserted-by":"publisher","key":"ref13","DOI":"10.1109\/TCSI.2017.2702587"},{"doi-asserted-by":"publisher","key":"ref14","DOI":"10.1109\/JSSC.2016.2609386"},{"key":"ref15","first-page":"208","article-title":"12.2 A 7 nm FinFET SRAM macro using EUV lithography for peripheral repair analysis","volume-title":"Proc. IEEE ISSCC","author":"Song"},{"doi-asserted-by":"publisher","key":"ref16","DOI":"10.1109\/ICCD.2014.6974673"},{"doi-asserted-by":"publisher","key":"ref17","DOI":"10.1007\/978-3-642-23096-7_7"},{"doi-asserted-by":"publisher","key":"ref18","DOI":"10.1109\/TCSI.2016.2556118"},{"doi-asserted-by":"publisher","key":"ref19","DOI":"10.1109\/TVLSI.2013.2268543"},{"doi-asserted-by":"publisher","key":"ref20","DOI":"10.1109\/TVLSI.2013.2239320"},{"doi-asserted-by":"publisher","key":"ref21","DOI":"10.1109\/TCSI.2023.3244338"},{"doi-asserted-by":"publisher","key":"ref22","DOI":"10.1109\/TCSII.2023.3262667"}],"container-title":["IEEE Transactions on Circuits and Systems II: Express Briefs"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/8920\/10695751\/10542405.pdf?arnumber=10542405","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,9,27]],"date-time":"2024-09-27T04:35:42Z","timestamp":1727411742000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10542405\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,10]]},"references-count":22,"journal-issue":{"issue":"10"},"URL":"https:\/\/doi.org\/10.1109\/tcsii.2024.3407592","relation":{},"ISSN":["1549-7747","1558-3791"],"issn-type":[{"type":"print","value":"1549-7747"},{"type":"electronic","value":"1558-3791"}],"subject":[],"published":{"date-parts":[[2024,10]]}}}