{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,1]],"date-time":"2026-04-01T18:52:16Z","timestamp":1775069536324,"version":"3.50.1"},"reference-count":18,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"8","license":[{"start":{"date-parts":[[2025,8,1]],"date-time":"2025-08-01T00:00:00Z","timestamp":1754006400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2025,8,1]],"date-time":"2025-08-01T00:00:00Z","timestamp":1754006400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2025,8,1]],"date-time":"2025-08-01T00:00:00Z","timestamp":1754006400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. II"],"published-print":{"date-parts":[[2025,8]]},"DOI":"10.1109\/tcsii.2025.3582549","type":"journal-article","created":{"date-parts":[[2025,6,23]],"date-time":"2025-06-23T13:30:09Z","timestamp":1750685409000},"page":"1098-1102","source":"Crossref","is-referenced-by-count":1,"title":["Body-Biased Hybrid Sense Amplifier With High Offset Tolerance for Low-Voltage SRAMs"],"prefix":"10.1109","volume":"72","author":[{"ORCID":"https:\/\/orcid.org\/0009-0001-0746-9376","authenticated-orcid":false,"given":"Minglong","family":"Jia","sequence":"first","affiliation":[{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7603-1079","authenticated-orcid":false,"given":"Pengyuan","family":"Zhao","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China"}]},{"given":"Linnan","family":"Li","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-1594-8800","authenticated-orcid":false,"given":"Xiang","family":"Li","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China"}]},{"ORCID":"https:\/\/orcid.org\/0009-0000-5529-1421","authenticated-orcid":false,"given":"Zhi","family":"Li","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China"}]},{"ORCID":"https:\/\/orcid.org\/0009-0005-1688-6373","authenticated-orcid":false,"given":"Huidong","family":"Zhao","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-9102-2111","authenticated-orcid":false,"given":"Shushan","family":"Qiao","sequence":"additional","affiliation":[{"name":"Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/VLSIC.2000.852898"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/4.823443"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/4.859510"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/81.989159"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2011.6055315"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2007.4405677"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2013.2268312"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/CICC.2008.4672006"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/ISQED.2008.4479712"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/ESSCIRC.1988.5468276"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2019.2902102"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2024.3443594"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2019.2899314"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2021.3081917"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2025.3558562"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/LSSC.2018.2794827"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/ISSCC.2014.6757418"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2022.3219136"}],"container-title":["IEEE Transactions on Circuits and Systems II: Express Briefs"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/8920\/11104806\/11048660.pdf?arnumber=11048660","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,8,1]],"date-time":"2025-08-01T18:17:49Z","timestamp":1754072269000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/11048660\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,8]]},"references-count":18,"journal-issue":{"issue":"8"},"URL":"https:\/\/doi.org\/10.1109\/tcsii.2025.3582549","relation":{},"ISSN":["1549-7747","1558-3791"],"issn-type":[{"value":"1549-7747","type":"print"},{"value":"1558-3791","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025,8]]}}}