{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T20:40:48Z","timestamp":1782938448136,"version":"3.54.5"},"reference-count":21,"publisher":"Institute of Electrical and Electronics Engineers (IEEE)","issue":"7","license":[{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T00:00:00Z","timestamp":1782864000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"funder":[{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"crossref","award":["NRF-2026-25467770"],"award-info":[{"award-number":["NRF-2026-25467770"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"crossref"}]},{"DOI":"10.13039\/501100003725","name":"National Research Foundation of Korea","doi-asserted-by":"crossref","award":["RS-2023-00281582"],"award-info":[{"award-number":["RS-2023-00281582"]}],"id":[{"id":"10.13039\/501100003725","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["IEEE Trans. Circuits Syst. II"],"published-print":{"date-parts":[[2026,7]]},"DOI":"10.1109\/tcsii.2026.3696631","type":"journal-article","created":{"date-parts":[[2026,5,25]],"date-time":"2026-05-25T19:57:25Z","timestamp":1779739045000},"page":"683-687","source":"Crossref","is-referenced-by-count":0,"title":["An Untrimmed Cryogenic Voltage Reference Based on Saturation-to-Linear Transition Achieving 60.3-ppm\/K TC and 0.56% Inaccuracy"],"prefix":"10.1109","volume":"73","author":[{"ORCID":"https:\/\/orcid.org\/0009-0002-4530-1256","authenticated-orcid":false,"given":"Sungbin","family":"Park","sequence":"first","affiliation":[{"name":"Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4319-6619","authenticated-orcid":false,"given":"Youngwoo","family":"Ji","sequence":"additional","affiliation":[{"name":"Department of Electronic Engineering, Hanbat National University, Daejeon, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-1814-6211","authenticated-orcid":false,"given":"Jae-Yoon","family":"Sim","sequence":"additional","affiliation":[{"name":"Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea"}],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"263","reference":[{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2017.2737549"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1038\/s41534-017-0038-y"},{"key":"ref3","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2023.3309317"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2021.3116975"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.23919\/vlsitechnologyandcir65189.2025.11075183"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TCSI.2024.3507783"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2798281"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/ESSDERC.2019.8901806"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2821763"},{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1109\/VLSITechnology18217.2020.9265013"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2020.2976546"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2025.3530472"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2024.3378768"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/bcicts63111.2025.11211444"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/TCSII.2025.3606689"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/LSSC.2018.2875821"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/LSSC.2020.3010234"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2024.3432283"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2022.3233551"},{"key":"ref20","doi-asserted-by":"publisher","DOI":"10.1109\/JSSC.2016.2627544"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1109\/VLSITechnologyandCir46769.2022.9830505"}],"container-title":["IEEE Transactions on Circuits and Systems II: Express Briefs"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx8\/8920\/11578119\/11535132.pdf?arnumber=11535132","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2026,7,1]],"date-time":"2026-07-01T19:39:01Z","timestamp":1782934741000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/11535132\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2026,7]]},"references-count":21,"journal-issue":{"issue":"7"},"URL":"https:\/\/doi.org\/10.1109\/tcsii.2026.3696631","relation":{},"ISSN":["1549-7747","1558-3791"],"issn-type":[{"value":"1549-7747","type":"print"},{"value":"1558-3791","type":"electronic"}],"subject":[],"published":{"date-parts":[[2026,7]]}}}