{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T15:09:17Z","timestamp":1730300957752,"version":"3.28.0"},"reference-count":21,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,10,1]],"date-time":"2019-10-01T00:00:00Z","timestamp":1569888000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,10,1]],"date-time":"2019-10-01T00:00:00Z","timestamp":1569888000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,10,1]],"date-time":"2019-10-01T00:00:00Z","timestamp":1569888000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,10]]},"DOI":"10.1109\/tencon.2019.8929531","type":"proceedings-article","created":{"date-parts":[[2019,12,12]],"date-time":"2019-12-12T21:01:41Z","timestamp":1576184501000},"page":"62-66","source":"Crossref","is-referenced-by-count":5,"title":["An Architectural Parametric Analysis for Vertical Super-Thin Body (VSTB) MOSFET with Double Material Gate (DMG)"],"prefix":"10.1109","author":[{"given":"Kuheli Roy","family":"Barman","sequence":"first","affiliation":[]},{"given":"Srimanta","family":"Baishya","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1016\/S0038-1101(00)00271-9"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2626397"},{"key":"ref12","doi-asserted-by":"publisher","DOI":"10.4103\/0256-4602.72582"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2007.04.038"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.2003.1269402"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.5573\/JSTS.2008.8.4.302"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1143\/JJAP.43.2151"},{"journal-title":"Vertical super-thin body semiconductor on dielectric wall devices and methods of their fabrication","year":"2014","author":"koldiaev","key":"ref17"},{"journal-title":"International Technology Roadmap for Semiconductors","year":"2015","key":"ref18"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2687465"},{"key":"ref4","first-page":"553","article-title":"Monte Carlo simukation of a 30 nm dual-gate MOSFET: How far can Si go?","author":"frank","year":"1992","journal-title":"IEDM Tech Dig"},{"key":"ref3","doi-asserted-by":"crossref","first-page":"78","DOI":"10.1109\/5.658761","article-title":"Moore's law governs the silicon revolution","volume":"86","author":"bondy","year":"1998","journal-title":"Proc IEEE"},{"key":"ref6","first-page":"747","article-title":"Design and performance considerations for sub-$\\mu{\\mathrm{m}}$ double-gate SOI MOSFETs","author":"wong","year":"1994","journal-title":"IEDM Tech Dig"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1109\/IEDM.1998.746385"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1002\/047134608X.W3168.pub2"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/MCD.2005.1388765"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/JPROC.1999.752521"},{"key":"ref1","doi-asserted-by":"crossref","first-page":"256","DOI":"10.1109\/JSSC.1974.1050511","article-title":"Design of ion-implanted MOSFETs with very small physical dimensions","volume":"sc 9","author":"dennard","year":"1974","journal-title":"IEEE J Solid-State Circuits"},{"key":"ref9","first-page":"1","article-title":"Silicon-on-insulator technology","author":"jaju","year":"2004","journal-title":"EE 530 Advances in MOSFETs"},{"journal-title":"Sentaurus Device User Manual Version J 2014 09","year":"2014","key":"ref20"},{"key":"ref21","doi-asserted-by":"publisher","DOI":"10.1007\/s00339-018-2068-5"}],"event":{"name":"TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON)","start":{"date-parts":[[2019,10,17]]},"location":"Kochi, India","end":{"date-parts":[[2019,10,20]]}},"container-title":["TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8910516\/8929228\/08929531.pdf?arnumber=8929531","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,19]],"date-time":"2022-07-19T16:24:19Z","timestamp":1658247859000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8929531\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,10]]},"references-count":21,"URL":"https:\/\/doi.org\/10.1109\/tencon.2019.8929531","relation":{},"subject":[],"published":{"date-parts":[[2019,10]]}}}