{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,10,30]],"date-time":"2024-10-30T14:59:53Z","timestamp":1730300393291,"version":"3.28.0"},"reference-count":22,"publisher":"IEEE","license":[{"start":{"date-parts":[[2019,10,1]],"date-time":"2019-10-01T00:00:00Z","timestamp":1569888000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/ieeexplore.ieee.org\/Xplorehelp\/downloads\/license-information\/IEEE.html"},{"start":{"date-parts":[[2019,10,1]],"date-time":"2019-10-01T00:00:00Z","timestamp":1569888000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2019,10,1]],"date-time":"2019-10-01T00:00:00Z","timestamp":1569888000000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019,10]]},"DOI":"10.1109\/tencon.2019.8929619","type":"proceedings-article","created":{"date-parts":[[2019,12,13]],"date-time":"2019-12-13T02:01:41Z","timestamp":1576202501000},"page":"1842-1845","source":"Crossref","is-referenced-by-count":2,"title":["Pocket engineered electrostatically doped tunnel field effect transistor"],"prefix":"10.1109","author":[{"given":"M. A.","family":"Raushan","sequence":"first","affiliation":[]},{"given":"Naushad","family":"Alam","sequence":"additional","affiliation":[]},{"given":"M. J.","family":"Siddiqui","sequence":"additional","affiliation":[]}],"member":"263","reference":[{"key":"ref10","doi-asserted-by":"publisher","DOI":"10.1007\/s10825-018-1129-5"},{"key":"ref11","doi-asserted-by":"publisher","DOI":"10.1166\/jno.2018.2334"},{"key":"ref12","first-page":"1","article-title":"Current switching ratio optimization using dual pocket doping engineering","author":"dash","year":"2017","journal-title":"Superlattices Microstruct"},{"key":"ref13","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2089525"},{"key":"ref14","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2015.2478955"},{"key":"ref15","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2014.2327626"},{"key":"ref16","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2013.2284290"},{"key":"ref17","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2018.2861943"},{"key":"ref18","doi-asserted-by":"publisher","DOI":"10.1016\/j.spmi.2017.11.002"},{"key":"ref19","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2010.2045731"},{"key":"ref4","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2018.03.007"},{"key":"ref3","first-page":"412","volume":"64","author":"kondekar","year":"2017","journal-title":"Design and Analysis of Polarity controlled Electrically Doped Tunnel FET With Bandgap Engineering for Analog \/ RF Applications"},{"key":"ref6","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2693679"},{"key":"ref5","doi-asserted-by":"publisher","DOI":"10.1016\/j.mee.2016.04.016"},{"key":"ref8","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2672640"},{"key":"ref7","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2010.2093142"},{"key":"ref2","doi-asserted-by":"publisher","DOI":"10.1109\/TDMR.2017.2653620"},{"key":"ref1","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2013.2276888"},{"key":"ref9","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2017.2730922"},{"journal-title":"Atlas User's Manual","year":"2013","key":"ref20"},{"key":"ref22","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2016.2600621"},{"journal-title":"Simulation of Double-Gate Silicon Tunnel FETs with A High-k Gate Dielectric","year":"2010","author":"boucart","key":"ref21"}],"event":{"name":"TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON)","start":{"date-parts":[[2019,10,17]]},"location":"Kochi, India","end":{"date-parts":[[2019,10,20]]}},"container-title":["TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/8910516\/8929228\/08929619.pdf?arnumber=8929619","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,7,19]],"date-time":"2022-07-19T20:25:26Z","timestamp":1658262326000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/8929619\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,10]]},"references-count":22,"URL":"https:\/\/doi.org\/10.1109\/tencon.2019.8929619","relation":{},"subject":[],"published":{"date-parts":[[2019,10]]}}}