{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,7]],"date-time":"2024-09-07T18:51:58Z","timestamp":1725735118181},"reference-count":14,"publisher":"IEEE","license":[{"start":{"date-parts":[[2023,10,31]],"date-time":"2023-10-31T00:00:00Z","timestamp":1698710400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-029"},{"start":{"date-parts":[[2023,10,31]],"date-time":"2023-10-31T00:00:00Z","timestamp":1698710400000},"content-version":"stm-asf","delay-in-days":0,"URL":"https:\/\/doi.org\/10.15223\/policy-037"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2023,10,31]]},"DOI":"10.1109\/tencon58879.2023.10322475","type":"proceedings-article","created":{"date-parts":[[2023,11,22]],"date-time":"2023-11-22T19:07:19Z","timestamp":1700680039000},"page":"579-582","source":"Crossref","is-referenced-by-count":0,"title":["Behavior of Crystal Defects at Low Temperature in AlGaN\/GaN HEMTs"],"prefix":"10.1109","author":[{"given":"Haruki","family":"Hayashi","sequence":"first","affiliation":[{"name":"School of Engineering, Chukyo University,Department of Electrical and Electronic Engineering,Nagoya,JAPAN"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuki","family":"Shimizu","sequence":"additional","affiliation":[{"name":"School of Engineering, Chukyo University,Department of Electrical and Electronic Engineering,Nagoya,JAPAN"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Atsuya","family":"Fujiwara","sequence":"additional","affiliation":[{"name":"School of Engineering, Chukyo University,Department of Electrical and Electronic Engineering,Nagoya,JAPAN"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Kondo","family":"Kento","sequence":"additional","affiliation":[{"name":"School of Engineering, Chukyo University,Department of Electrical and Electronic Engineering,Nagoya,JAPAN"}],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hirohisa","family":"Taguchi","sequence":"additional","affiliation":[{"name":"School of Engineering, Chukyo University,Department of Electrical and Electronic Engineering,Nagoya,JAPAN"}],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"263","reference":[{"doi-asserted-by":"publisher","key":"ref1","DOI":"10.1109\/ACCESS.2019.2906402"},{"doi-asserted-by":"publisher","key":"ref2","DOI":"10.1016\/j.esr.2019.01.006"},{"doi-asserted-by":"publisher","key":"ref3","DOI":"10.1002\/9781119515661.ch2"},{"doi-asserted-by":"publisher","key":"ref4","DOI":"10.1109\/ACCESS.2019.2913447"},{"doi-asserted-by":"publisher","key":"ref5","DOI":"10.1109\/ACCESS.2021.3118897"},{"doi-asserted-by":"publisher","key":"ref6","DOI":"10.3390\/en15145244"},{"key":"ref7","first-page":"339","article-title":"Gan-based high-electron mobility transistors for high-power and high-frequency application A review. Innovations in Electronics and Communication Engineering","volume-title":"Proceedings of the 8th ICIECE","author":"Murugapandiyan"},{"doi-asserted-by":"publisher","key":"ref8","DOI":"10.1063\/5.0086978"},{"doi-asserted-by":"publisher","key":"ref9","DOI":"10.1016\/j.aeue.2018.12.006"},{"doi-asserted-by":"publisher","key":"ref10","DOI":"10.1109\/ACCESS.2020.2967027"},{"doi-asserted-by":"publisher","key":"ref11","DOI":"10.1016\/j.ssel.2019.04.002"},{"doi-asserted-by":"publisher","key":"ref12","DOI":"10.3390\/electronics12041049"},{"doi-asserted-by":"publisher","key":"ref13","DOI":"10.1016\/j.micrna.2022.207433"},{"doi-asserted-by":"publisher","key":"ref14","DOI":"10.25046\/aj030526"}],"event":{"name":"TENCON 2023 - 2023 IEEE Region 10 Conference (TENCON)","start":{"date-parts":[[2023,10,31]]},"location":"Chiang Mai, Thailand","end":{"date-parts":[[2023,11,3]]}},"container-title":["TENCON 2023 - 2023 IEEE Region 10 Conference (TENCON)"],"original-title":[],"link":[{"URL":"http:\/\/xplorestaging.ieee.org\/ielx7\/10322307\/10322308\/10322475.pdf?arnumber=10322475","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,3,13]],"date-time":"2024-03-13T20:33:18Z","timestamp":1710361998000},"score":1,"resource":{"primary":{"URL":"https:\/\/ieeexplore.ieee.org\/document\/10322475\/"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,10,31]]},"references-count":14,"URL":"https:\/\/doi.org\/10.1109\/tencon58879.2023.10322475","relation":{},"subject":[],"published":{"date-parts":[[2023,10,31]]}}}